成果發表

台大電子所管傑雄教授與物理所蔡定平教授雙方研究團隊 合作研發可見光波全波段消色差超穎透鏡 為光學領域帶來更尖端的多領域應用 系列研究發表於《Nature Communications》(DOI: 10.1038/s41467-017-00166-7)、 《Nature Nanotechnology》(DOI:10.1038/s41565-017-0052-4)、 以及《Nano Letters》(DOI:10.1021/acs.nanolett.7b03135) 新聞連結

中研院應用科學研究中心主任暨臺灣大學物理所蔡定平教授,與臺灣大學電子工程學研究所管傑雄教授,雙方研究團隊攜手合作,成功地製作出具有寬頻消色差能力之超穎透鏡 (Broadband Achromatic Meta-lens),打破了傳統透鏡消除寬頻色差需仰賴數片透鏡組合的觀念,躋身國際光學領域上重大的突破之一。該研究首篇發表於2017年八月的自然通訊 (Nature Communications) 期刊上,該篇研究係針對紅外光波段進行調制,後續更有針對可見光波段應用之研究,亦陸續發表於高等國際期刊自然奈米科技(Nature nanotechnology)以及奈米快訊(Nano Letters)上。 為因應手持電子元件之需求,平面、微米尺度之光學透鏡技術的創新,往往帶動著科技望下一世代邁進;但由於光學色差現象的存在,現今的解決方法係以透鏡組合消除色差,但往往得與增大的體積妥協;故此研究中之「平面型寬頻消色差超穎透鏡」正為解決此糾結之最佳辦法;由於可與可見光波長響應之次波長結構尺度令光學微影不敷使用,需得透過電子束微影進行,而電子束曝光顯影的精準度、圖形之連續性、以及後續蝕刻的完整性,在在地攸關整個光學透鏡的品質-即成像效果,故其超常規的要求,使得整個製程極度仰賴經驗、技術及技巧,才能得到一個可與理論模擬相符合之元件。因而,此項研究無論在理論建立,或是製程實現上,都堪稱是科技上之重大突破。 研究團隊中,負責元件製程的管傑雄教授表示,該研究難能可貴之處在於團隊間的分工無間,各展其長,而台大電機系電子束實驗室(以下略稱本實驗室)在其中擔當要務,肩負微透鏡之超穎表面結構的實現,實屬關鍵一環。自2004年購置電子束微影系統以來,本實驗室便持續著電子束微影相關技術的開發及突破。從甜甜圈法(Doughnut method)校正電子束曝光時鄰近效應(Proximity effect)的影響,繼而發現低溫快速顯影法並成功製作出線寬小於10 奈米之金屬線路,後更建立理論模型以模擬曝光劑量之投放,大幅改善奈米尺度的開口諧振環(Split-ring resonator)之精確度;在與學生們共同的努力下,實驗室一步步地將電子束微影技術推展至巔峰。故此次的合作研究,我們得以憑藉著長年累積的經驗與技術,同時輔以創新的製程方式,成功且完美地實現超穎透鏡之表面奈米陣列結構,能有此次豐碩的成果,在在說明了基礎研究的重要性,創新的研究亦得奠基於扎實的基礎之上。 「平面型寬頻消色差超穎透鏡」系列研究可參考以下網址: https://www.nature.com/articles/s41467-017-00166-7 https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b03135 https://www.nature.com/articles/s41565-017-0052-4 相關報導亦可自臺灣大學、中研院、及物理所各網頁中瞭解。

圖一 以電子束微影技術製作全波段消色差超穎透鏡的製程步驟圖示

圖二 具全可見光波段消色差能力之超穎透鏡之光學照片,及其細節之電子顯微鏡照片。其中奈米柱狀結構之高深寬比,在以蝕刻製程所得之柱狀結構中堪稱世界之最。

“Development of Superlattice Infrared Photodetectors (Cutting Edge Nanotechnology),” Shih-Hung Lin, Chieh-Hsiung Kuan, IN-TECH, 2010, ISBN: 978-953-7619-93-0, 2010. “微電子電路設計”呂學士,管傑雄,劉致維ISBN:9789574930067 `

1. Kung-Chu Ho, Vin-Cent Su, Da-Yo Huang, Ming-Lun Lee, Nai-Kuan Chou, Chieh-Hsiung Kuan (2016, Nov). Investigation of low frequency electrolytic solution behavior with an accurate electrical impedance method. Chemical Physics Letters. 本人為通訊作者.
2. Y.H. You, F.C. Chu, H.C. Hsieh, W.H. Wu, M.L. Lee, C.H. Kuan and R.M. Lin (2015, Jun). Enhanced performance of InGaN-based light-emitting diodes grown on volcano-shaped patterned sapphire substrates with embedded SiO2. RSC Advances.
3. Ting-Wei Liao, Hung-Ming Chen, Kuan-Yuan Shen and Chieh-Hsiung Kuan (2015, Mar). Pure, single crystal Ge nanodots formed using a sandwich structure via pulsed UV excimer laser annealing. Nanotechnology. 本人為通訊作者.
4. Kuan-Yuan Shen, Hung-Ming Chen, Ting-Wei Liao and Chieh-Hsiung Kuan* (2015, Jan). Applying low-energy multipulse excimer laser annealing to improve charge retention of Au nanocrystals embedded in MOS capacitors. Journal of Physics D: Applied Physics. (Accepted). 本人為通訊作者.
5. Hung-Ming Chen, Yuen-Wuu Suen, Sao-Jie Chen, Guang-Li Luo, Yen-Pu Lai, Shih-Ta Chen, Chien-Hung Lee and Chieh-Hsiung Kuan* (2014, Nov). Effect of surface Si redistribution on the alignment of Ge dots grown on pit-patterned Si(001) substrates. Nanotechnology, 25(47), 475301-1~475301-6. 本人為通訊作者.
6. 管傑雄 (2014, Jun). Utilizing Two Dimensional Photonic Crystals in Different Arrangement to Investigate the Correlation between the Air Duty Cycle and the Light Extraction Enhancement of InGaN-Based Light-Emitting Diodes. IEEE Photonics Journal, 6(3), 8200408. 本人為通訊作者.
7. Vin-Cent Su, Po-Hsun Chen, Ray-Ming Lin, Ming-Lun Lee, Yao-Hong You, Chung-I Ho, Yi-Chi Chen, Wei-Fan Chen, and Chieh-Hsiung Kuan (2013, Dec). Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates. OPTICS EXPRESS, 30065-30073. 本人為通訊作者.
8. 管傑雄 (2013, Jun). Continuously tunable organic solid-state DFB laser utilizing molecular reorientation in molecular glasses. Organic Electronics , 30065-30073.
9. 管傑雄 (2013, Apr). Influence of the absorber layer thickness and rod length on the performance of three-dimensional nanorods thin film hydrogenated amorphous silicon solar cells. Journal of Applied Physics, 163106.
10. 管傑雄 (2012, Nov). Short-Term External Buckling With Pneumatic Retinopexy for Retinal Detachment With Inferior Retinal Breaks. American Journal of Ophthalmology, 750-756.
11. Jong-Lih Li, Chieh-Hsiung Kuan, and Ting-Wei Liao (2012, Oct). Well-patterned metal-semiconductor interface improving contact conductance. J. Nanosci. Nanotechnol., 12, 1-5. 本人為通訊作者.
12. 管傑雄 (2012, Oct). Effects of oxygen bonding on defective semiconducting and metallic single-walled carbon nanotube bundles. Carbon.
13. 管傑雄 (2012, Jul). Plasmonic multilayer nanoparticles enhanced photocurrent in thin film
14. 管傑雄 (2012, Jul). Double-barrier Superlattice Infrared Photodetector Integrated with Multiple Quantum-Well Infrared Photodetector to Improve Performance. Int. J. Electrochem. Sci. , 7, 5746-5753 . NSC 100-2221-E-390-017. 本人為通訊作者.
15. 管傑雄 (2012, Jun). Side-Coupling Scheme for a High-Power Laser Diode Array With Grating Couplers: Thermal andGeometrical Issues. J. Lightwave Technol, 30,1743-1749.
16. Yann-Wen Lan, K. Aravind, Cen-Shawn Wu, Chieh-Hsiung Kuan, Kuei-Shu Chang-Liao, Chii-Dong Chen (2012, Apr). Interplay of spin–orbit coupling and Zeeman effect probed by Kondo resonance in a carbon nanotube quantum dot. Carbon, 50,3748–3752.
17. 管傑雄 (2012, Mar). Magnetic Field Enhanced Resonant Tunneling in a Silicon Nanowire Single-Electron-Transistor. J. Nanosci. Nanotechnol, 12,2509-2512.
18. 管傑雄 (2012, Mar). The Mechanism of Carrier Transportation in a Superlattice Infrared Photodetector Sandwiched by Front and Rear Barriers. International Journal of ELECTROCHEMICAL SCIENCE, 7, 1937-1945. NSC 100-2221-E-390-017. 本人為通訊作者.
19. Hung-Ming Chen, Chieh-Hsiung Kuan, Yuen-Wuu Suen, Guang-Li Luo, Yen-Pu Lai, Fu-MinWang and Shih-Ta Chen (2012, Jan). Thermally induced morphology evolution of pit-patterned Si substrate and its effect on nucleation properties of Ge dots. Nanotechnology, 23期,015303. (SCI). NSC 98-2120-M-009-002. 本人為通訊作者.
20. 管傑雄 (2011, Aug). In situ beam drift detection using a two-dimensional electron-beam position monitoring system for multiple-electron-beam–direct-write lithography. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 29期,041607. (SCI).
21. 管傑雄 (2011, Aug). Identification of embedded charge defects in suspended silicon nanowires using a carbon-nanotube cantilever gate. APPLIED PHYSICS LETTERS, 99期,053104. (SCI).
22. 管傑雄 (2011, May). Fabrication method of high-quality Ge nanocrystals on patterned Si substrates by local melting point control. Nanotechnology, 22期,275604. (SCI). NSC 97-2221-E-002-053-MY3. 本人為通訊作者.
23. 管傑雄 (2011, Apr). Manipulation of multidimensional plasmonic spectra for information storage. APPLIED PHYSICS LETTERS, 98期,171106. (SCI).
24. 管傑雄 (2011, Feb). Device Performance and Photoelectron Resonance in Double-Barrier Superlattice Infrared Photodetectors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 158期,H370-H373. (SCI). NSC 97-2221-E-002-053-MY3. 本人為通訊作者.
25. 管傑雄 (2010, Sep). Electromagnetic energy vortex associated with sub-wavelength plasmonic Taiji marks. Optics Express, 18期,P.19665-19671 . (SCI).
26. 管傑雄 (2009, Sep). Occurrence of Polytype Transformation during Nitrogen Doping of SiC Bulk Wafer. Materials Science Forum, Vols. 600-603, P.39-P.42. (SCI).
27. 管傑雄 (2009, Jul). Selectively enhanced emission and suppression in Si0.5Ge0.5/Si multiple quantum wells by photonic crystals. JOURNAL OF APPLIED PHYSICS, 106期, 013510. (SCI).
28. 管傑雄 (2009, Jun). Using Liquid Crystal Assisted Replica Molding Method to Align Uniaxial Molecules in Patterned Polymers at Ambient Temperature . MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 510期, P.60-P.69. (SCI).
29. 管傑雄 (2008, Nov). Liquid Crystal Assisted Replica Molding Method to Align Uniaxial Molecules in Patterned Polymer at Ambient Temperature. JAPANESE JOURNAL OF APPLIED PHYSICS, 47期, 11, P.8606-P.8610. (SCI).
30. 管傑雄 (2008, Aug). High-density one-dimensional well-aligned germanium quantum dots on a nanoridge array. APPLIED PHYSICS LETTERS, 93期, 8, 083101. (SCI). NSC 96-2120-M-009-010. 本人為通訊作者.
31. 管傑雄 (2008, Jul). Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxide-semiconductor capacitor. JOURNAL OF APPLIED PHYSICS, 104期, 1, 014506. (SCI). NSC 93-2215-E-002-015. 本人為通訊作者.
32. 管傑雄 (2008, Jul). Electroluminescence enhancement of SiGe/Si multiple quantum wells through nanowall structures . NANOTECHNOLOGY, 19期, 36, 365705. (SCI).
33. 管傑雄 (2008, Mar). Resonance-enhanced dipolar interaction between terahertz photons and confined acoustic phonons in nanocrystals. APPLIED PHYSICS LETTERS, 92期, 9, 093122. (SCI).
34. 管傑雄 (2007, Dec). Photogalvanic effects for interband transition in p-Si0.5Ge0.5/Si multiple quantum wells. Applied Physics Letters, 91, 252102.
35. 管傑雄 (2007, Oct). The study of temperature dependence of photoresponse in superlattice infrared photodetectors. JOURNAL of APPLIED PHYSICS, 102期,074502 P1-P5. (SCI). NSC 94-2215-E-002-017. 本人為通訊作者.
36. 管傑雄 (2007, Sep). Enhancement and tunability of active plasmonic by multilayer grating coupled emission. OPTICS EXPRESS, P.11608-P.11615. (SCI). NSC 96-2218-E-002-206.
37. 管傑雄 (2007, Aug). Enhanced luminescence of organic/metal nanostructure for grating coupler active long-range surface plasmonic device. APPLIED PHYSICS LETTERS, 91期, 083114, P.1-P.3. (SCI). NSC 95-2221-E-002-305.
38. 管傑雄 (2007, Jul). Static conformation and dynamics of single DNA molecules confined in nanoslits. PHYSICAL REVIEW E, 76期, 011806, P.1-P.8. (SCI). NSC 94-2120-M-002-009.
39. 管傑雄 (2007, Feb). In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds. APPLIED PHYSICS LETTERS, 90期, 061912, P.1-P.3. (SCI).
40. 管傑雄 (2007, Jan). A Superlattice Infrared Photodetector Integrated with Multiple Quantum Wells to Improve the Performance. IEEE Journal of Quantum Electronics, 43 期, P.72-P.77. (SCI). 本人為通訊作者.
41. 管傑雄 (2007, Jan). Cyclotron localization in a sub-10-nm silicon quantum dot single electron transistor. APPLIED PHYSICS LETTERS, 90期, 032106, P.1-P.3. (SCI).
42. 管傑雄 (2006, May). Guided three-dimensional molecular self-assembly on silicon substrates. APPLIED PHYSICS LETTERS, 88, 263104. (SCI). NSC 94-2112-M-009-038.
43. 管傑雄 (2006, Apr). Beaming light from a subwavelength metal slit surrounded by dielectric surface gratings. OPTICS EXPRESS, P.3503-P.3511. (SCI). NSC 93-2622-E-002-003.
44. 管傑雄 (2005, Aug). Instrumentation of a high-sensitivity microwave vector detection system for low-temperature applications. REVIEW OF SCIENTIFIC INSTRUMENTS, 76期, 084704, P.1-P.7. (SCI). NSC 93-2112-M-005-009.
45. 管傑雄 (2004, Dec). The evolution of electroluminescence in Ge quantum-dot diodes with the fold number. APPLIED PHYSICS LETTERS, 85期, P.6107 - P.6109. (SCI). NSC 92-2215-E-002-022.
46. 管傑雄 (2004, Nov). High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems. APPLIED PHYSICS LETTERS, 85期, NUMBER 18, P.4196-P.4198. (SCI).
47. 管傑雄 (2003, Nov). Infrared detection utilizing both intersubband and free-carrier absorption in reverse-biased Superlattice infrared photodetector. IEEE JOURNAL OF QUANTUM ELECTRONICS, 39期,p.1476-p.1480. (SCI). NSC 89-2215-E-002-048.
48. 管傑雄 (2003, Oct). Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum. SOLID-STATE ELECTRONICS, 47期, P.1775 - P.1780. (SCI). NSC 90-2215-E-002-024.
49. 管傑雄 (2003, Aug). Study of period number effect in the superlattice infrared photodetector. Infrared physics and technology, 44期,p.399-p.409. (SCI). NSC 90-2215-E-002-015.
50. 管傑雄 (2003, Feb). Relaxation mechanisms of the photoelectrons in the second miniband of a superlattice structure. IEEE JOURNAL OF QUANTUM ELECTRONICS, 39期,p.306-p.313. (SCI). NSC 89-2215-E-002-058.
51. 管傑雄 (2002, Apr). Multi-color infrared detection realized with two distinct superlattices separated by a blocking barrier. Applied physics letters, 80期,p.2251-p.2253. (SCI). NSC 91-2215-E-002-007.
52. 管傑雄 (2002, Feb). Performance and application of a superlattice infrared photodetector with a blocking barrier. Jouranl of applied physics, 91期,p.943-p.948. (SCI). NSC 89-2215-E-002-058.
53. 管傑雄 (2000, Oct). Multicolor infrared detection using two stacks of superlattice structures. Applied physics letters, 77期,p.2240-p.2242. (SCI). NSC 89-2215-E-002-019.
54. 管傑雄 (2000, May). Design and characterization of superlattice infrared photodetector operating at low bias voltage. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47期,p.944-p.948. (SCI).
55. Ray-Ming Lin, Shiang-Feng Tang and C. H. Kuan, “Study of Current Leakage in InAs p-i-n Photodetectors,” Journal of Vacuum Science & Technology B,, Vol. 18(6),, Nov. 2000
56. C. C. Huang and C. H. Kuan,, “Quantum Well Infrared Photodetector with V-groove Structure for Normal Incident Light Coupling,” Bulletin of the College of Engineering, N. T. U., No. 79,, Jun. 2000
57. C. Y. Chen and C. H. Kuan,, “Design and Calibration of a Noise Measurement System,” IEEE Transactions on Instrumentation and Measurement, Vol. 49,, Feb. 2000
58. C. C. Chen, H. C. Chen, M. C. Hsu and C. H. Kuan,, “Performance and Application of a Superlattice Infrared Photodetector with a Blocking Barrier,” Journal of Applied Physics (SCI, Vol 91,, pp. 943~948., Feb. 2000
59. Wei CM, Chen TT, Chen YF, et al, “In-plane optical anisotropy in self-assembled Ge quantum dots induced by interfacial chemical bonds,” APPLIED PHYSICS LETTERS 90 (6), Art. No. 061912 FEB 5 2007, Feb. 2000
60. C. H. Kuan and C. H. Tu,, “Lifetime of Excess Electron-hole Pairs Measured with White Noise Performance,” Jounal of Applied Physics, Vol. 87, pp.1836-1840, 2000
61. Shiang-Feng Tang, Shih-Yen Lin, Si-Chen Lee, Chieh-Hsiung Kuan and Ya-Tung Cherng,, “High Temperature Operated (~250 K) Photovoltaic-Photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector,” International Electron Devices Meeting Technical Digest,, 2000
62. M.C. Hsu, Y.F. Hsu and C. H. Kuan,, “Characteristics of a Superlattice Infrared Detector and Comparison with QWIPPhotodetectors: Materials and Devices IV,” edited by Gail J. Brown etc.,” SPIE Proceedings, Vol. 3629, pp. 171-176, 1999
63. C. C. Chen, M. C. Hsu, and C. H. Kuan,, “Characteristics of Photovoltaic Wavelength-tunnable Superlattice Infrared PhotodetectorAdvanced Luminescenct Materials and Quantum Confinement,” edited by M. Cathy etc.,” The Electrochemical Soceity Proceedings, Vol. 99-22, pp. 485-495, 1999
64. M. C. Hsu and C. H. Kuan,, “Multiple-color GaAs/AlGaAs superlattice infrared photodetector controlled by the polarity and magnitude of the bias voltage,” International Electron Devices Meeting Technical Digest, pp. 591~594, 1999
65. C. L. Pan, Y. A. Chiang, C. H. Kuan, M. L. Kuo, G. J. Jan,, “Development and Electrical Analysis of DNA Aqueous Solution on Microchannel Biochip,” Journal of Medical and Biological Engineering

主持計畫經歷

計畫名稱 計畫內擔任工作 補助或委託機構 起訖年月 執行情形 經費總額
7-5nm半導體技術節點研究 (4/5)(105-2622- 8-002- 001-) 共同主持人 2016/08/01 - 2017/07/31 科技部 執行中 60,000,000
應用於人體熱影像偵測之高響應低雜訊紅外線感測器研製(105-2221-E-029-004-) 共同主持人 2016/08/01 - 2017/07/31 科技部 執行中 876,000
應用微/奈米圖案化基板技術開發高效能氮化鎵類高電子遷移率電晶體與紫外光發光二極體(105-2221-E-002-185-MY3) 共同主持人 2016/08/01 - 2017/07/31 科技部 執行中 3,998,000
人工電子視網膜人體試驗計畫(104-2325-B-010-005-) 共同主持人 2016/05/01 - 2017/04/30 科技部 執行中 5,577,000
7-5nm半導體技術節點研究(3/5)(104-2622-8-002-003-) 共同主持人 2015/08/01 - 2016/07/31 科技部 已結案 59,989,000
量子點紅外線光譜偵測系統晶片(3/3)(104-2218-E-002-002-) 共同主持人 2015/08/01 - 2017/01/31 科技部 執行中 2,176,000
邁向人體試驗之第二代植入式四百像素人工視網膜系統之研發與動物實驗驗證-總計畫暨子計畫二:第二代植入式四百像素人工視網膜晶片之研發(2/2)(104-2220-E-009-005-) 共同主持人 2015/05/01 - 2016/07/31 科技部 已結案 6,265,000
7-5nm半導體技術節點研究(2/5)(103-2622-E-002-031-) 共同主持人 2014/08/01 - 2016/01/31 科技部 已結案 59,922,000
量子點紅外線光譜偵測系統晶片(2/3)(103-2218-E-002-005-) 共同主持人 2014/08/01 - 2016/01/31 科技部 已結案 1,950,000
邁向人體試驗之第二代植入式四百像素人工視網膜系統之研發與動物實驗驗證-總計畫暨子計畫二:第二代植入式四百像素人工視網膜晶片之研發(1/2)(103-2220-E-009-008-) 共同主持人 2014/05/01 - 2015/07/31 科技部 已結案 5,991,000
共振式太陽能電池(103-2623-E-002-018-ET) 主持人 2014/01/01 - 2014/12/31 科技部 已結案 685,000
發展電子束微影技術與聚焦離子束技術於製作三維微結構(102-2221-E-002-151-MY3) 主持人 2013/08/01 - 2016/07/31 科技部 已結案 4,351,000
量子點紅外線光譜偵測系統晶片(1/3)(102-2218-E-002-011-) 共同主持人 2013/08/01 - 2015/01/31 科技部 已結案 2,258,000
學研合作計畫-次22奈米金屬閘極/高介電質場效電晶體及記憶體技術平台(3/3)(102-2120-M-009-002-) 共同主持人 2013/08/01 - 2015/07/31 科技部 已結案 11,500,000
邁向人體試驗之植入式人工視網膜系統之研發與動物實驗驗證-總計畫暨子計畫二:植入式人工網膜晶片之研發與視網膜電刺激模型之建立(3/3)(102-2220-E-009-005-) 共同主持人 2013/05/01 - 2014/07/31 科技部 已結案 3,203,000

專利

專利名稱 專利國家 專利號碼 專利期間 發明人
雙能障超晶格紅外線偵測器 中華民國 I 380463 2012/12 至 2030/01 管傑雄,林士弘,張哲瑋,盧仁祥
用於增進導電元件導電特性之奈米孔洞陣列 中華民國 I 375984 2012/11 至 2028/09 管傑雄,黎中立
用於增進導電元件導電特性之奈米孔洞陣列 美國 US 8,232,475 B2 2012/07 至 2031/01 管傑雄,黎中立
製作量子點紅外線偵測器之方法 中華民國 152557 2001/01 至 2021/01 管傑雄
三五族半導體光檢測器裝置 中華民國 406437 2000/01 至 2020/01 管傑雄
Voltage-Switchable and –Tunnable and Environment-Insensitive Multicolor Superlattice Infrared Photodector 美國 6818917 2004/09 至 2024/09 管傑雄
Color regulating device for llumination and pparatus sing the same, and ethod of regulating color 美國 8687147. 趙治宇、黃久菖、管傑雄、蘇文生
色温度調整装置、使用色温度調整設備及色温度調整方法 日本 5548754 趙治宇、黃久菖、管傑雄、蘇文生
Color regulating device for illumination and apparatus using the same, and method of regulating color 美國 8698980 趙治宇、黃久菖、管傑雄、蘇文生
色温度調整装置、使用色温度調整設備及色温度調整方法 中華民國 101141562 趙治宇、黃久菖、管傑雄、蘇文生
色温度調整装置、使用色温度調整設備及色温度調整方法 中華民國 101141563 趙治宇、黃久菖、管傑雄、蘇文生
Color regulating device for illumination and apparatus using the same, and method of regulating color 歐洲 12191594.6 趙治宇、黃久菖、趙治宇、黃久菖、管傑雄、蘇文生
Color regulating device for illumination and apparatus using the same, and method of regulating color 歐洲 12191612.6 趙治宇、黃久菖、管傑雄、蘇文生
色温度調整装置、使用色温度調整設備及色温度調整方法 日本 2012-246018 趙治宇、黃久菖、管傑雄、蘇文生