Advanced Silicon Device and Process Laboratory

Journal Paper Conference Paper Student Thesis

Journal Paper

2025 2024 2023 2022 2021 2020 2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996

2025

Yun-Wen Chen and C. W. Liu, “Relative stabilities and physical parameters of rhombohedral distorted HfO2 crystalline phases,” Accepted by Journal of Physics D: Applied Physics.
M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields,” Phys. Rev. B, vol. 111, no. 4, L041301, Jan. 2025, doi: 10.1103/PhysRevB.111.L041301.
Ying-Qi Liu, Bo-Wei Huang, Chun-Yi Cheng, Wei-Jen Chen, Min-Kuan Lin, Yi Huang, Ding-Wei Lin, and C. W. Liu, “VT Tuning of Split Gate GeSi Nanosheet CFETs with Dual Work Function Metals,” IEEE Transactions on Electron Devices, vol. 72, no. 9, pp. 4708-4713, Sept. 2025, doi: 10.1109/TED.2025.3592634.
Yuan-Ming Liu, Jih-Chao Chiu, Yu-Shan Wu, Yu-Cheng Fan, Rong-Wei Ma, Hidenari Fujiwara, Kuan-Wei Lu, and C. W. Liu, “Amorphous IGZO GAA Nanosheet FETs Using Typical Channel Release,” IEEE Transactions on Electron Devices, vol. 72, no. 9, pp. 4998-5003, Sept. 2025, doi: 10.1109/Ted.2025.3591582.
Rachit Dobhal, Yuan-Ming Liu, Jih-Chao Chiu, Hsien-Ming Sung, Yu-Shan Wu, Yu-Cheng Fan, Johannes Gracia, Rong-Wei Ma, Hidenari Fujiwara, C. W. Liu, “Amorphous In2O3 FeFET-like Devices by Interface Dipoles,” Appl. Phys. Lett., Vol.126, Issue 11, pp. 112102, March 2025, doi: https://doi.org/10.1063/5.0255212.
M. Yu. Melnikov, D. G. Smirnov, A. A. Shashkin, S.-H. Huang ,C. W. Liu, and S. V. Kravchenko, “Stabilization of a two-dimensional quantum electron solid in perpendicular magnetic fields,” Phys. Rev. B, vol. 111, no. 4, L041301, Jan. 2025, doi: 10.1103/PhysRevB.111.L041301.

2024

Zefu Zhao, Yu-Tsung Liao, Yu-Rui Chen, Yun-Wen Chen, Wan-Hsuan Hsieh, Jer-Fu Wang, Yu-An Chen, Hao-Yi Lu, Wei-Teng Hsu, Dai-Ying Lee, Ming-Hsiu Lee, and C. W. Liu, “C-axis Oriented HZO on Flat Amorphous TiN Achieving High Uniformity, Breakdown Field, Final 2Pr, and Endurance,” IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3502032.
Tao Chou, Tzu-Yun Liu, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, and C. W. Liu, “SRAM with Oxide Semiconductor Pull-Down Transistors on the Backside Enabling Full-Node PPA Improvement,” IEEE Electron Device Letters, vol. 46, no. 1, pp. 48-51, Jan. 2025, doi: 10.1109/LED.2024.3498840.
M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures,” Applied Physics Letters, vol. 125, pp. 153102, Oct. 2024.
Bo-Wei Huang, Wan-Hsuan Hsieh, Chien-Te Tu, Yi-Chun Liu, Yu-Rui Chen, Wei-Jen Chen, Chun-Yi Cheng, Hung-Chun Chou, and C. W. Liu, “Breakdown Voltage Enhancement of Nanosheet Transistors by Ultrathin Bodies,” IEEE Electron Device Letters, vol. 45, no. 6, pp. 956-959, June 2024, doi: 10.1109/LED.2024.3390580.
Zefu Zhao, Yun-Wen Chen, Yu-Rui Chen, and C. W. Liu, “Engineering Ferroelectric HZO with n+-Si/Ge Substrates Achieving High 2Pr = 84 μC/cm² and Endurance > 1E11,” IEEE Access, vol. 12, pp. 71598-71605, 2024, doi: 10.1109/ACCESS.2024.3402120.
Hsin-Cheng Lin, Wei-Teng Hsu, Tsai-Yu Chung, He-Wen Shen, Ching-Wang Yao, Tao Chou, Li-Kai Wang, and C. W. Liu, “RF Performance Benchmark of Nanosheets, Nanowires, FinFETs, and TreeFETs,” IEEE Access, vol. 12, pp. 70512-70518, 2024, doi: 10.1109/ACCESS.2024.3400673.
Hung-Chun Chou, Tao Chou, Shee-Jier Chueh, Sun-Rong Jan, Bo-Wei Huang, Chien-Te Tu, Yi-Chun Liu, Li-Kai Wang, and C. W. Liu, “Strain Evolution in SiGe Nanosheet Transistor Process Flow,” IEEE Transactions on Electron Devices, vol. 71, no. 5, pp. 2907-2913, May 2024, doi: 10.1109/TED.2024.3383409.
Asim Senapati, Zhao-Feng Lou, Jia-Yang Lee, Yi-Pin Chen, Shih-Yin Huang, Siddheswar Maikap, Min-Hung Lee, and C. W. Liu, “Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf_0.5Zr_0.5O₂ by Optimizing TiN_x Interfacial Capping Layer and Its Fatigue Mechanism,” IEEE Electron Device Letters, vol. 45, no. 4, pp. 673-676, 2024.
Wan-Hsuan Hsieh, Chien-Te Tu, Yu-Rui Chen, Bo-Wei Huang, Wei-Jen Chen, Yi-Chun Liu, Chun-Yi Cheng, Hung-Chun Chou, and C. W. Liu, “Monolithic 3D Self-Aligned Heterogeneous Nanosheet Channel Complementary FETs with Matched V_T by Band Alignments of Individual Channels,” IEEE Transactions on Electron Devices, vol. 71, no. 5, pp. 3383-3389, May 2024.
Ching-Wang Yao, Yu-Chieh Lee, Hsin-Cheng Lin, Tao Chou, Tsai-Yu Chung, Li-Kai Wang, Jen-Wei Yang, Sun-Rong Jan, and C. W. Liu, “Intrinsic Gate Capacitance of Ultrathin Body Nanosheets Considering Quantum Effects,” IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2271-2277, April 2024, doi: 10.1109/TED.2024.3364584.
Yuan-Ming Liu, Jih-Chao Chiu, Yu-Ciao Chen, Yu-Cheng Fan, Rong-Wei Ma, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Enhancements of Electrical Properties and Positive Bias Instability in Self-Aligned Top-Gate a-IGZO TFTs by Hydrogen Incorporation,” Semiconductor Science and Technology, vol. 39, no. 5, pp. 055003, Mar. 2024.
Wan-Hsuan Hsieh, Yu-Rui Chen, Yi-Chun Liu, Zefu Zhao, Jia-Yang Lee, Chien-Te Tu, Bo-Wei Huang, Jer-Fu Wang, M. H. Lee, and C. W. Liu, “Interfacial-Layer-Free Ge_0.95Si_0.05 Nanosheet FeFETs,” IEEE Transactions on Electron Devices, vol. 71, no. 3, pp. 1758-1763, March 2024.

2023

Guan-Hua Chen, Yu-Rui Chen, Zefu Zhao, Jia-Yang Lee, Yun-Wen Chen, Yifan Xing, Rachit Dobhal, and C. W. Liu , “A Kinetic Pathway to Orthorhombic Hf0.5Zr0.5O2,” IEEE Journal of the Electron Devices Society, vol. 11, pp. 752-758, Nov. 2023.
Tao Chou, Li-Kai Wang, Tsai-Yu Chung, Ching-Wang Yao, Hsin-Cheng Lin, and C. W. Liu , "3D SRAM Using Ultrathin Body Nanosheets and Bitline Signal Decoupling," IEEE Electron Device Letters, vol. 44, no. 12, pp. 1975-1978, Dec. 2023, doi: 10.1109/LED.2023.3329485.
M. Yu. Melnikov, A. A. Shakirov, A. A. Shashkin, S. H. Huang, C. W. Liu & S. V. Kravchenko, “Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system,” Scientific Reports, 13, 17364, pp. 1-6, 2023.
Yu-Rui Chen, Yi-Chun Liu, Hsin-Cheng Lin, Chien-Te Tu, Tao Chou, Bo-Wei Huang, Wan-Hsuan Hsieh, Shee-Jier Chueh, and C. W. Liu , “Fabrication and performance of highly stacked GeSi nanowire field effect transistors,” Communications Engineering, 2, 77, pp. 1-9, 2023.
Wei-Jen Chen, Yi-Chun Liu, Yun-Wen Chen, Yu-Rui Chen, Hsin-Cheng Lin, Chien-Te Tu, Bo-Wei Huang, and C. W. Liu , “Extremely High-k Hf0.2Zr0.8O2 Gate Stacks Integrated into 8 Stacked Ge0.95Si0.05 Nanowires and Nanosheets nFETs to Boost ION,” IEEE Transactions of Electron Devices, vol. 70, no. 12, pp. 6673-6679, 2023.
Yun-Wen Chen and C. W. Liu , “Effects of shear strain on HZO ferroelectric orthorhombic phases,” Appl. Phys. Lett., Vol. 123, no. 11, pp. 112901, Sep. 2023.
Zefu Zhao, Yu-Rui Chen, Yun-Wen Chen, Jer-Fu Wang, Yifan Xing, Wang Ji, Guan-Hua Chen, Jia-Yang Lee, Rachit Dobhal, and C. W. Liu , “Engineering Hf0.5Zr0.5O2 Ferroelectric Tunnel Junctions with Amorphous WOx Bottom Electrodes Achieving High Remanent Polarization and Record Low Operating Voltage,” IEEE Transactions of Electron Devices, vol. 70, no. 10, pp.5022-5027, Oct. 2023.
Jih-Chao Chiu, Yuan-Ming Liu, Eknath Sarkar, Yu-Ciao Chen, Yu-Cheng Fan, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu , “Mobility Enhancement of BCE Type Amorphous InGaZnO TFTs Using Triple Layer Channels,” IEEE Transactions of Electron Devices, vol. 70, no. 8, pp. 4194-4197, Aug. 2023
K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Y.-C. Chen, Z.-X. Li, M. H. Liao, Member, C. W. Liu , T.-H. Hou, P. Su, and M. H. Lee, “Fatigue Mechanism of Antiferroelectric Hf0.1Zr0.9O2 Toward Endurance Immunity by Opposite Polarity CyclingRecovery (OPCR) for eDRAM,” IEEE Transactions on Electron Devices, vol. 70, no. 4, pp. 2142-2146, Apr. 2023.

2022

Yifan Xing, Yu-Rui Chen, Jer-Fu Wang, Zefu Zhao, Yun-Wen Chen, Guan-Hua Chen, Yuxuan Lin, Rachit Dobhal, and C. W. Liu, “Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2,” accepted by IEEE Journal of the Electron Devices Society, 2022.
Yu-Rui Chen, Zefu Zhao, Chien-Te Tu, Yi-Chun Liu, Bo-Wei Huang, Yifan Xing, Guan-Hua Chen, and C. W. Liu, “ION Enhancement of Ge0.98Si0.02 Nanowire nFETs by High-k Dielectrics,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1601-1604, Oct. 2022.
Ya-Jui Tsou, Wei-Jen Chen, Chin-Yu Liu, Yi-Ju Chen, Kai-Shin Li, Jia-Min Shieh, Pang-Chun Liu, Wei-Yuan Chung, C. W. Liu, Ssu-Yen Huang, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun, “Demonstration of High Endurance and Retention Spin-Transfer-Torque-Assisted Field-Free Perpendicular Spin-Orbit Torque Cells by an Etch-Stop-on-MgO Process,” IEEE Electron Device Letters, vol. 43, no. 10, pp. 1661-1664, Oct. 2022.
Chia-Jung Tsen, Chia-Che Chung, and C. W. Liu, “Self-Heating Mitigation of TreeFETs by Interbridges,” IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4123-4128, Aug. 2022.
Chia-Che Chung, Bo-Wei Huang, Hsin-Cheng Lin, Tao Chou, Chia-Jung Tsen, and C. W. Liu, “Self-Heating of FinFET Circuitry Simulated by Multi-Correlated Recurrent Neural Networks,” accepted by IEEE Electron Device Letters, 2022.
Hsin-Cheng Lin, Tao Chou, Kung-Ying Chiu, Sun-Rong Jan, Chia-Che Chung, Chia-Jung Tsen, and C. W. Liu, “RF Performance of Stacked Si Nanosheets/Nanowires,” accepted by IEEE Electron Device Letters, 2022.
Yu-Rui Chen, Bo-Wei Huang, Chun-Yi Cheng, Wan-Hsuan Hsieh, Chung-En Tsai, Chien-Te Tu, Yi-Chun Liu, and C. W. Liu, “Multi-VT of Stacked GeSn Nanosheets by ALD WNxCy Work Function Metal,” accepted by IEEE Transactions on Electron Devices, 2022.
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. M. Radonjic´, V. Dobrosavljevic´, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, “Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system”, Scientific Reports Vol. 12, pp. 5080 2022.
Ming-Xuan Lee, Jih-Chao Chiu, Song-Ling Li, Eknath Sarkar, Yu-Ciao Chen, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs,” IEEE Journal of the Electron Devices Society, Vol. 10, pp. 301-308, Mar. 2022.
Yun-Wen Chen and C. W. Liu, “Boost of orthorhombic population with amorphous SiO2 interfacial layer – A DFT study,” Semicond. Sci. Technol. Vol. 37, No. 5, pp. 05LT01, Mar. 2022.
Chien-Te Tu, Wan-Hsuan Hsieh, Bo-Wei Huang, Yu-Rui Chen, Yi-Chun Liu, Chung-En Tsai, Shee-Jier Chueh, and C. W. Liu, “Experimental Demonstration of TreeFETs Combining Stacked Nanosheets and Low Doping Interbridges by Epitaxy and Wet Etching,” IEEE Electron Device Letters, Vol. 43, No. 5, pp. 682-685, May 2022.
Zefu Zhao, Yu-Rui Chen, Jer-Fu Wang, Yun-Wen Chen, Jia-Ren Zou, Yuxuan Lin, Yifan Xing, C. W. Liu, and Chenming Hu, “Engineering Hf0.5Zr0.5O2 Ferroelectric/Antiferroelectric Phases with Oxygen Vacancy and Interface Energy Achieving High Remanent Polarization and Dielectric Constants,” IEEE Electron Device Letter, Vol. 43, No. 4, pp. 553-556, Apr. 2022.
Bo-Wei Huang, Chung-En Tsai, Yi-Chun Liu, Chien-Te Tu, Wan-Hsuan Hsieh, Sun-Rong Jan, Yu-Rui Chen, Shee-Jier Chueh, Chun-Yi Cheng, and C. W. Liu, “Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching,” IEEE Transactions on Electron Devices, Vol. 69, No. 4, pp. 2130-2136, Apr. 2022.
Chun-Hung Yeh, Cheng-Tse Lee, Jih-Chao Chiu, Yi-Ting Wu, Chih-Ting Lin, Chwen Yu, Tzu-Sou Chuang, and C. W. Liu, “Electrical Measurements to Detect Liquid Concentration,” IEEE Transactions on Semiconductor Manufacturing, Vol. 35, Issue. 1, pp. 11-15, Feb. 2022.

2021

Kuo-Yu Hsiang, Chun-Yu Liao, Jer-Fu Wang, Zhao-Feng Lou, Chen-Ying Lin, Shih-Hung Chiang, C. W. Liu, Tuo-Hung Hou, and Min-Hung Lee, “Unipolar Parity of Ferroelectric-Antiferroelectric Characterized by Junction Current in Crystalline Phase Hf1−xZrxO2 Diodes,” Nanomaterials, Vol. 11, No. 10, pp. 2685, Oct. 2021.
D. Chen, S. Cai, N.-W. Hsu, S.-H. Huang, Y. Chuang, E. Nielsen, J.-Y. Li, C. W. Liu, T. M. Lu, and D. Laroche, “Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure,” Applied Physics Letters, Vol. 119, No. 22, pp. 223103, Nov. 2021.
Jih-Chao Chiu, Song-Ling Li, Ming-Xuan Lee, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Performance Improvement by Double-Layer a-IGZO TFTs with a Top Barrier,” accepted by IEEE Journal of Electron Devices Society, 2021.
Chun-Hung Yeh, Cheng-Tse Lee, Jih-Chao Chiu, Yi-Ting Wu, Chih-Ting Lin, Chwen Yu, Tzu-Sou Chuang, and C. W. Liu, “Electrical Measurements to Detect Liquid Concentration,” IEEE Transactions on Semiconductor Manufacturing, Vol. 35, Issue. 1, Feb. 2022.
K.-Y. Hsiang, C.-Y. Liao, J.-H. Liu, J.-F. Wang, S.-H. Chiang, S.-H. Chang, F.-C. Hsieh; H. Liang, C.-Y. Lin, Z.-F. Lou, T.-H. Hou,C. W. Liu and M. H. Lee, “Bilayer-Based Antiferroelectric HfZrO2 Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory”, IEEE Electron Device Letter, Vol. 42, No. 10, pp. 1464-1467, 2021. (Cited No./Self Cited No.= 3 / 0)
(Invited) Ya-Jui Tsou, Wei-Jen Chen, Huan-Chi Shih, Pang-Chun Liu, C. W. Liu, Kai-Shin Li, Jia-Min Shieh, Yu-Shen Yen, Chih-Huang Lai, Jeng-Hua Wei, Denny D. Tang, and Jack Yuan-Chen Sun, “Thermally-Robust Perpendicular SOT-MTJ Memory Cells with STT-Assisted Field-Free Switching,” in IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6623-6628, Dec. 2021.
(Invited) Yi-Chun Liu, Chien-Te Tu, Chung-En Tsai, Bo-Wei Huang, Chun-Yi Cheng, Shee-Jier Chueh, Jyun-Yan Chen, and C. W. Liu, “Highly Stacked GeSi Nanosheets and Nanowires by Low Temperature Epitaxy and Wet Etching,” IEEE Transactions on Electron Devices, vol. 68, no. 12, pp. 6599-6604, Dec. 2021.
Chia-Che Chung, Hsin-Cheng Lin, Bo-Wei Huang, Chia-Jung Tsen, and C. W. Liu, “Architecture and Optimization of 2T (Footprint) SRAM,” IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 4918-4924, Oct. 2021.
Hsin-Cheng Lin, Tao Chou, Chia-Che Chung, Chia-Jung Tsen, Bo-Wei Huang, and C. W. Liu, “RF Performance of Stacked Si Nanosheet nFETs,” IEEE Transactions on Electron Devices, Vol. 68, No. 10, pp. 5277-5283, Oct. 2021.
V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system,” Phys. Rev. B, Vol. 103, No. 16, pp. 161302, April. 2021.
Chien-Te Tu, Yu-Shiang Huang, Chun-Yi Cheng, Chung-En Tsai, Jyun-Yan Chen, Hung-Yu Ye, Fang-Liang Lu, and C. W. Liu, “Uniform 4-Stacked Ge0.9Sn0.1 Nanosheets Using Double Ge0.95Sn0.05 Caps by Highly Selective Isotropic Dry Etch,” IEEE Transactions on Electron Devices, Vol. 68, No. 4, pp. 2071-2076, Apr. 2021.

2020

Yun-Wen Chen, Sheng-Ting Fan, and C. W. Liu, “Energy preference of uniform polarization switching for HfO2 by first-principle study,” J. Phys. D: Appl. Phys., 54 (2021) 085304 (7pp), Dec. 2020.
Chung-En Tsai, Fang-Liang Lu, Yi-Chun Liu, Hung-Yu Ye, and C. W. Liu, “Low Contact Resistivity to Ge Using In-situ B and Sn Incorporation by Chemical Vapor Deposition,” IEEE Transactions on Electron Devices, Vol. 67, No. 11, pp. 5053-5058, Nov. 2020.
Shih-Ya Lin, Hsiao-Hsuan Liu, Chien-Te Tu, Yu-Shiang Huang, Fang-Liang Lu, and C. W. Liu, “Optical Detection of Parasitic Channels of Vertically Stacked Ge0.98Si0.02 nGAAFETs,” IEEE Transactions on Electron Devices, Vol. 67, No. 10, pp. 4073-4078, Oct. 2020.
A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov, M. Radonjić, V. Dobrosavljević, S.-H. Huang, C. W. Liu, A. Y. X. Zhu, S. V. Kravchenko, “Manifestation of strong correlations in transport in ultra-clean SiGe/Si/SiGe quantum wells,” Phys. Rev. B, Rapid Communication, Vol. 102, No. 8, pp. 081119, Aug. 2020.
Hung-Yu Ye and C. W. Liu, "On-Current Enhancement in TreeFET by Combining Vertically Stacked Nanosheets and Interbridges," IEEE Electron Device Letters, vol. 41, no. 9, pp. 1292-1295, Sept. 2020.
Chia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Oxygen-related Reliability of Amorphous InGaZnO Thin Film Transistors,” IEEE Journal of the Electron Devices Society, Vol. 8, pp. 540-544, May. 2020.
Sheng-Ting Fan, Yun-Wen Chen, and C. W. Liu, “Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations,” Journal of Physics D: Applied Physics, Vol. 53, No. 23, Apr. 2020.
Yi-Chun Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, Chien-Te Tu, and C. W. Liu, “Novel vertically stacked Ge0.85Si0.15 nGAAFETs above a Si channel with low SS of 76 mV/dec by underneath Si channel and enhanced Ion (1.7X at VOV = VDS = 0.5 V) by Ge0.85Si0.15 channels,” Semicond. Sci. Technol., Vol. 35, No. 5, pp. 055010, Mar. 2020.
Xiaoxue Liu, Tzu-Ming Lu, Charles Thomas Harris, Fang-Liang Lu, Chia-You Liu, Jiun-Yun Li, C. W. Liu, and Rui-Rui Du, “Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure,” Phys. Rev. B, Vol. 101, No. 7, pp. 075304, Feb. 2020.
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, Amy Y. X. Zhu, and S. V. Kravchenko, "Metallic state in a strongly interacting spinless two-valley electron system in two dimensions," Phys. Rev. B, Vol. 101, No. 4, pp. 045302, Jan. 2020.
Hsiao-Hsuan Liu, Yu-Shiang Huang, Fang-Liang Lu, Hung-Yu Ye, and C. W. Liu, “Different Infrared Responses from the Stacked Channels and Parasitic Channel of Stacked GeSn Channel Transistors,” IEEE Electron Device Letters, vol. 41, no. 1, pp. 147-150, Jan. 2020.

2019

Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs,” IEEE Electron Device Letters, vol. 40, no. 12, pp. 1913-1916, Dec. 2019.
Ya-Jui Tsou, Jih-Chao Chiu, Huan-Chi Shih, and C. W. Liu, “Write Margin Analysis of Spin-Orbit Torque Switching Using Field-Assisted Method,” IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, vol. 5, no. 2, pp. 173-181, Dec. 2019.
Emmanuele Galluccio, Nikolay Petkov, Gioele Mirabelli, Jessica Doherty, Shih-Ya Lin, Fang-Liang Lu, C. W. Liu, Justin D. Holmes, and Ray Duffy, “Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08,” Thin Solid Films, Vol. 690, 137568, Nov. 2019.
Chia-Che Chung, Hung-Yu Ye, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, “Self-Heating Induced Interchannel Vt Difference of Vertically Stacked Si Nanosheet Gate-All-Around MOSFETs,” IEEE Electron Device Letters, vol. 40, no. 12, pp. 1913-1916, Dec. 2019.
An-Hung Tai, Chia-Chun Yen, Tsang-Long Chen, Cheng-Hsu Chou, and C. W. Liu, “Mobility Enhancement of Back-Channel-Etch Amorphous InGaZnO TFT by Double Layers with Quantum Well Structures,” IEEE Transactions on Electron Devices, Vol. 66, No. 10, pp. 4188-4192, Oct. 2019.
Pin-Shiang Chen and C. W. Liu, "Theoretical Calculation of Ferroelectric Hf1-xZrxO2 by First-Principle Molecular Dynamic Simulation,” Mater. Res. Express 6, 095045, 2019.
Chih-Hsiung Huang, Chung-En Tsai, Yu-Rui Chen, and C. W. Liu, “Effects of Annealing Temperature and Nitrogen Content on Effective Work Function of Tungsten Nitride,” IEEE Electron Device Letters, Vol. 40, No. 8, pp.1237-1240, Aug. 2019.
C.-C. Chung, H. H. Lin, W. K. Wan, M.-T. Yang, and C. W. Liu, "Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance", IEEE Transactions on Electron Devices, Vol. 66, No. 6, pp. 2710-2714, Jun. 2019.
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, Amy Y. X. Zhu, S. V. Kravchenko, S.-H. Huang, and C. W. Liu, "Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system," Phys. Rev. B, Vol. 99, No. 8, 081106(R), Feb. 2019.

2018

Hung-Yu Ye, Chia-Che Chung and C. W. Liu, "Mobility Calculation of Ge Nanowire Junctionless and Inversion-Mode Nanowire NFETs With Size and Shape Dependence," in IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5295-5300, Dec. 2018
Chung-Yi Lin, Hung-Yu Ye, Fang-Liang Lu, H. S. Lan, and C. W. Liu, “Biaxial strain effects on photoluminescence of Ge/strained GeSn/Ge quantum well,” Opt. Mater. Express 8, 2795-2802, 2018
V. T. Dolgopolov, M. Yu. Melnikov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Fractional Quantum Hall Effect in SiGe/Si/SiGe Quantum Wells in Weak Quantizing Magnetic Fields,” JETP Letters, Vol. 107, No. 12, pp. 794-797, 2018.
Yu-Shiang Huang, Fang-Liang Lu , Ya-Jui Tsou, Hung-Yu Ye, Shih-Ya Lin, Wen-Hung Huang, and C. W. Liu, ” Vertically Stacked Strained 3-GeSn-Nanosheet pGAAFETs on Si Using GeSn/Ge CVD Epitaxial Growth and the Optimum Selective Channel Release Process”, IEEE Electron Device Letters, Vol. 39, No. 9, pp.1274-1277, 2018.
Chung-En Tsai, Fang-Liang Lu, Pin-Shiang Chen, and C. W. Liu, “Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition,” Thin Solid Films, Vol. 660, pp. 263-266, 2018.
Fang-Liang Lu, Chung-En Tsai, I-Hsieh Wong, Chun-Ti Lu, and C. W. Liu, “Dopant Recovery in Epitaxial Ge on SOI by Laser Annealing With Device Applications,” IEEE Transactions on Electron Devices, Vol. 65, No. 7, pp. 2925-2931, 2018.
E. Bussmann, John King Gamble, J. C. Koepke, D. Laroche, S. H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu, B. S. Swartzentruber, M. P. Lilly, M. S. Carroll, and T.-M. Lu, “Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices,” Physical Review Materials 2, 066004, 2018.

2017

M. Yu. Melnikov, V. T. Dolgopolov, A. A. Shashkin, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/ SiGe quantum wells,” Journal of Applied Physics 122, 224301, 2017.
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko, “Indication of band flattening at the Fermi level in a strongly correlated electron system,” Scientific Reports 7, 14539, 2017.
T. M. Lu, C. T. Harris, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “Effective g factor of low-density two-dimensional holes in a Ge quantum well,” Appl. Phys. Lett., Vol. 111, 102108, 2017.
Chun-Ti Lu, Fang-Liang Lu, Chung-En Tsai, Wen-Hung Huang, and C. W. Liu, “Process simulation of pulsed laser annealing on epitaxial Ge on Si,” ECS J. Solid State Sci. Tech., Vol. 6, pp. 495-498, 2017.
T. M. Lu, L. A. Tracy, D. Laroche, S.-H. Huang, Y. Chuang, Y.-H. Su, J.-Y. Li, and C. W. Liu, “Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system,” Scientific Reports 7, 2468, 2017.
Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, C. W. Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Schubert S. Chu, and Satheesh Kuppurao.,” High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness”, IEEE Trans. on Electron Devices, Vol. 64, No. 6, pp.2498-2504, 2017.
H.-S. Lan, S. T. Chang, and C. W. Liu, “Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge1-xSnx alloys,” 95, 201201(R), Phys. Rev. B, Rapid Communication, 2017.
Chih-Hsiung Huang, Yu-Shiang Huang, Da-Zhi Chang, Tzo-Tao Lin, and C. W. Liu, “Interface trap density reduction due to AlGeO interfacial layer formation by Al capping on Al2O3/GeOx/Ge stack,” IEEE Transactions on Electron Devices, Vol. 64, No. 4, pp. 1412-1417, 2017.
H.-S. Lan and C. W. Liu, “Band alignments at strained Ge1-xSnx/relaxed Ge1-ySny heterointerfaces,” 50, 13LT02, J. Phys. D: Appl. Phys., 2017.
Pin-Shiang Chen, Sheng-Ting Fan, Huang-Siang Lan, C. W. Liu, “Band calculation of lonsdaleite Ge,” J. Phys. D: Appl. Phys. 50, 015107, 2017.

2016

Hung-Yu Ye, Huang-Siang Lan, and C. W. Liu, “Electron Mobility in Junctionless Ge Nanowire NFETs,” IEEE Transactions on Electron Devices, Vol. 63, No.11, pp. 4191, 2016.
Chung-Yi Lin, Chih-Hsiung Huang, Shih-Hsien Huang, Chih-Chiang Chang, C. W. Liu, Yi-Chiau Huan , Hua Chung, Chorng-Ping Chang “Photoluminescence and electroluminescence from Ge⁄strained GeSn⁄Ge quantum wells” Appl. Phys. Lett., Vol. 109, 091103, 2016.
S.-T. Fan, J.-Y. Yan, D.-C. Lai, C. W. Liu, “The hysteresis-free negative capacitance field effect transistors using non-linear poly capacitance,” Solid-State Electronics, Volume 122, Pages 13-17, 2016.
X. Zhu, T.-H. Cheng, and C. W. Liu, “Ga Content and Thickness Inhomogeneity Effects on Cu(In, Ga)Se2 Solar Modules”, Electronic Materials Letters, Vol. 12, No. 4, pp. 506-511, 2016.
D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, C. W. Liu and T. M. Lu, “Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure,” Appl. Phys. Lett., Vol. 108, 233504, 2016.
Chun-Ti Lu, Yu-Shiang Huang and C. W. Liu, “Passivation of Al2O3 / TiO2 on monocrystalline Si with relatively low reflectance,” J. Phys. D: Appl. Phys. 49, 245105, 2016.
Chieh Lo, Zheng-Lun Feng, Wei-Lun Huang, C. W. Liu, T. -L. Chen, and C. H. Chou, “Abnormal Threshold Voltage Shift of Amorphous InGaZnO Thin-film Transistors due to Mobile Sodium,” IEEE J. of Electron Devices Society, Vol. 4, No. 5, pp. 353-357, 2016.
Shi Luo, Carissa Eisler, Tsun-Hsin Wong, Hai Xiao, Chuan-En Lin, Tsung-Ta Wu, Chang-Hong Shen, Jia-Min Shieh, Chuang-Chuang Tsai, C. W. Liu, Harry A. Atwater, William A. Goddard III, Jiun-Haw Lee, Julia R. Greer, “Suppression of surface recombination in CuInSe2 (CIS) thin films via Trioctylphosphine Sulfide (TOP:S) surface passivation,” Acta Materialia, Volume 106, Pages 171–181, 2016.
T. M. Lu, D. Laroche, S.-H. Huang, Y. Chuang, J.-Y. Li, and C. W. Liu, “High-mobility capacitively-induced two-dimensional electrons in a lateral superlattice potential,” Scientific Reports 6, 20967, 2016.

2015

S.-H. Huang, F.-L. Lu, W.-L. Huang, C.-H. Huang, and C. W. Liu, “The ∼3×1020 cm−3 electron concentration and low specific contact resistivity of phosphorus-doped Ge on Si by in-situ chemical vapor deposition doping and laser annealing”, IEEE Electron Device Letter, Vol. 36, No. 11, pp. 1114-1117, 2015.
Sun-Rong Jan, Tien-Pei Chou, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov “Comments and Corrections Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”, IEEE Transactions on Electron Devices, Vol. 62, No. 9, pp. 3106, 2015
Jhih-Yang Yan, Sun-Rong Jan, Yi-Chung Huang, Huang-Siang Lan, Y.-H. Huang, Bigchoug Hung, K.-T. Chan, Michael Huang, M.-T. Yang and C. W. Liu, “Asymmetric Keep-out Zone of Through-Silicon Via using 28nm Technology Node”, IEEE Electron Device Letter, Vol. 36, No. 9, pp. 938-940, 2015.
I-Hsieh Wong, Yen-Ting Chen, Shih-Hsien Huang, Wen-Hsien Tu, Yu-Sheng Chen and C. W. Liu, “Junctionless Gate-all-around PFETs using in-situ Boron Doped Ge channel on Si”, IEEE Transaction on Nanotechnology, Vol. 14, No. 5, pp. 878-882, 2015.
Yen-Yu Chen, C.-C. Yen, T.-Y. Chang, C. W. Liu, “Enhance light emission from Ge by GeO2 micro hemispheres”, Solid-State Electronics, Volume 110, Pages 83-85, 2015.
D. Laroche, S.-H. Huang, E. Nielsen, C. W. Liu, J.-Y. Li, and T. M. Lu, “Magneto-transport of an electron bilayer system in an undoped Si/SiGe double-quantum-well heterostructure,” Appl. Phys. Lett., Vol. 106, 143503, 2015.
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S.-H. Huang, C. W. Liu, and S. V. Kravchenko,“Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well,” Appl. Phys. Lett., Vol. 106, 092102, 2015.

2014

Xiaobo Zhu and C. W. Liu, “Fabrication and characterization of Cu(In,Ga)Se2 p-channel thin film transistors”, Appl. Phys. Lett., Vol. 105, 143502, 2014.
C.W. Liu, M. Östling, and J.B. Hannon, “New Materials for Post-Si Computing”, MRS Bulletin, Vol. 39, No. 8, pp. 658-662, August, 2014
Shi Luo, Jiun-Haw Lee, C. W. Liu, Jia-Min Shieh, Chang-Hong Shen, Tsung-Ta Wu ,D. Jang and Julia R. Greer, “Strength, stiffness,and microstructure of Cu(In,Ga)Se2 thin films deposited viasputtering and co-evaporation,” Appl. Phys. Lett. 105, 011907 (2014).
M. Yu. Melnikov, A. A. Shashkin, V. T. Dolgopolov, S. V. Kravchenko, S.-H. Huang, C. W. Liu, “Effective Electron Mass in High_Mobility SiGe/Si/SiGe Quantum Wells” JETP Letters, Vol. 100, No. 2, pp. 114-119, 2014
Wen-Hsien Tu, Shu-Han Hsu, and C. W. Liu, “The PN Junctions of Epitaxial Germanium on Silicon by Solid Phase Doping” IEEE Trans. Electron Device, Vol. 61, No. 7, pp. 2595-2598, 2014
I-Hsieh Wong, Yen-Ting Chen, Jhih-Yang Yan, Huang-Jhih Ciou, Yu-Sheng Chen and C. W. Liu, “Fabrication and Low Temperature Characterization of Ge (110) and (100) p-MOSFETs” IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 2215, 2014.
H. -S. Lan and C. W. Liu, “Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors”, Appl. Phys. Lett., Vol. 104, 192101, 2014.
Hung-Chih Chang, Cheng-Ming Lin, Chih-Hsiung Huang, and C. W. Liu, “Hysteresis Reduction by Fluorine Incorporation into High Permittivity Tetragonal ZrO2 on Ge”, Appl. Phys. Lett., Vol. 104, 032902, 2014.

2013

Y. -T. Chen, H. -C. Chang, I. -H. Wong, H. -C. Sun, H. -J. Ciou, W. -T. Yeh, S. -J. Lo, and C. W. Liu, "Radiation Impact of EUV on High Performance Ge MOSFETs," IEEE Electron Device Letters, vol. 34, no. 10, pp. 1220–1222, 2013.
Ming-Heng Tsai, Sun-Rong Jan, Che-Yu Yeh, C. W. Liu, Robert V. Goldstein, Valentin A. Gorodtsov, and Pavel S. Shushpannikov, "Modeling and Optimization of Edge Dislocation Stressors," IEEE Electron Device Letters, vol. 34, no. 8, pp. 948–950, 2013.
Cheng-Ming Lin, Hung-Chih Chang, I-Hsieh Wong, Shih-Jan Luo, C. W. Liu, and Chenming Hu, "Interfacial layer reduction and high permittivity tetragonal ZrO2 on germanium reaching ultrathin 0.39 nm equivalent oxide thickness," Appl. Phys. Lett., Vol. 102, 232906, 2013.
Yen-Yu Chen, H.-C. Chang, Y.-H. Chi, C.-H. Huang, and C. W. Liu, “GeO2 passivation for low surface recombination velocity on Ge surface,” IEEE Electron Device Letters, Vol. 34, No. 3, pp. 444-446, 2013.
Tsang-Long Chen, Kuan-Chang Huang, Hsuan-Yi. Lin, C. H. Chou, H. H. Lin, and C. W. Liu, “Enhanced Current Drive of Double Gate α-IGZO Thin Film Transistors,” IEEE Electron Device Letters, Vol. 34, No. 3, pp. 417-419, 2013.
Hsin-Ping Wang , Tzu-Yin Lin , Chia-Wei Hsu ,Meng-Lin Tsai , Chih-Hsiung Huang , Wan-Rou Wei ,Ming-Yi Huang , Yi-Jiunn Chien , Po-Chuan Yang , C. W. Liu , Li-Jen Chou , and Jr-Hau He, “Realizing High-Efficiency Omnidirectional N-Type Si Solar Cells Via The Hierarchical Architecture Concept With Radial Junctions” ACS Nano, 7 (10), pp. 9325–9335, 2013.
Wan-Rou Wei , Meng-Lin Tsai , Shu-Te Ho , Shih-Hsiang Tai , Cherng-Rong Ho , Shin-Hung Tsai , C. W. Liu, Ren-Jei Chung , and Jr-Hau He, “Above-11%-Efficiency Organic–Inorganic Hybrid Solar Cells with Omnidirectional Harvesting Characteristics by Employing Hierarchical Photon Trapping Structures,” Nano Letters, 13 (8), pp. 3658–3663, 2013.

2012

T. M. Lu, W. Pan, D.C. Tsui, C.-H. Lee, and C. W. Liu, “The fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors,” Physical Review B, Vol. 85, pp. 121307(R), 2012.
S.-R. Jan, T.-P. Chou, C.-Y. Yeh, C. W. Liu, R. V. Goldstein, V. A. Gorodtsov, and P. S. Shushpannikov, “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias,” to be published on IEEE Transactions on Electron Devices, 2012.
W.-W. Hsu, J. Y. Chen, T.-H. Cheng, S. C. Lu, W.-S. Ho, Y.-Y. Chen, Y.-J. Chien, and C. W. Liu, “Surface passivation of Cu(In,Ga)Se2 using atomic layer deposited Al2O3,” Appl. Phys. Lett., Vol. 100, 023508, 2012.
C.W. Liu, T.-H. Cheng, Y.-Y. Chen, S.-R. Jan, C.-Y. Chen , S.T. Chan, Y.-H. Nien, Y. Yamamoto, and B. Tillack, “Direct and indirect radiative recombination from Ge,” Thin Solid Films, Vol. 520, pp. 3249–3254, 2012.
K.-M. Chen, G.-W. Huang, B.-Y. Chen, C.-S. Chiu, C.-H. Hsiao, W.-S. Liao, M.-Y. Chen, Y.-C. Yang, K.-L. Wang, and C. W. Liu, “LDMOS Transistor High-Frequency Performance Enhancements by Strain,” IEEE Electron Device Letters, Vol. 33, No. 4, pp. 471-473, 2012.

2011

T.M. Lu, C.-H. Lee, S.-H. Huang, D.C. Tsui, and C. W. Liu, "Upper limit of two-dimensional electron density in enhancement-mode Si/SiGe heterostructure field-effect transistors," Appl. Phys. Lett., Vol. 99, 153510, 2011.
H. -S. Lan, Y.-T. Chen, Hung-Chih Chang, J.-Y. Lin, William Hsu, W. -C. Chang, and C. W. Liu, "Electron scattering in Ge metal-oxide-semiconductor field-effect transistors," Appl. Phys. Lett., Vol. 99, 112109, 2011.
W. S. Ho, Y. Deng, Y.-Y. Chen, T.-H. Cheng, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Enhanced optical performance by energetic hydrogen passivation at Si/oxide interface,” Thin Solid Films, Vol. 520, pp. 448-451, 2011.
Y.-Y. Chen, J. Y. Chen, R.-J. Hsu, W. S. Ho, C. W. Liu, W.-F. Tsai, and C.-F. Ai, “Edge passivation of Si solar cells by omnidirectional hydrogen plasma implantation” Journal of The Electrochemical Society, Vol. 158, No. 9, pp. H912-H914, 2011.
Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, "Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates," Appl. Phys. Lett., Vol. 99, 022106, 2011.
S.-H. Tang, E. Y. Chang, M. Hudait, J.-S. Maa, C. W. Liu, G.-L.Luo, H.-D. Trinh, and Y.-H. Su, "High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate," Appl. Phys. Lett., Vol. 98, 161905, 2011.
Y.-T. Chen, H.-S. Lan, W. Hsu, Y.-C. Fu, J.-Y. Lin, and C. W. Liu, "Strain response of high mobility germanium n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates," Appl. Phys. Lett., Vol. 99, 022106, 2011.
S. -R. Jan, C. -Y. Chen, C. -H. Lee, S. -T. Chan, K. -L. Peng and C. W. Liu, “Influence of defects and interface on radiative transition of Ge” Appl. Phys. Lett., Vol. 98, 141105, 2011.
H. -S. Lan, S. -T. Chan and T. -H. Cheng, C. -Y. Chen and S. -R. Jan and C. W. Liu, “Biaxial tensile strain effects on photoluminescence of different orientated Ge substrates” Appl. Phys. Lett., Vol. 98, 101106, 2011.
C.-M. Lin, Y.-T. Chen, C.-H. Lee, H.-C. Chang, W.-C. Chang, H.-L. Chang, and C. W. Liu, “Voltage Linearity Improvement of HfO2-Based Metal-Insulator-Metal Capacitors with H2O Prepulse Treatment” Journal of The Electrochemical Society, Vol. 158, No. 2, H128, 2011.

2010

H.-C. Sun, C.-F. Huang, Y.-T. Chen, T.-Y. Wu, C. W. Liu, Y.-J. Hsu, and J.-S. Chen “Threshold Voltage and Mobility Extraction of NBTI Degradation of Poly-Si Thin-Film Transistors” IEEE Transactions on Electron Devices,Vol. 57, No. 11, pp. 3186, 2010.
Wen-Wei Hsu, Chao-Yun Lai, C. W. Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, and Clement H. Wann “Insulating Halos to Boost Planar NMOSFET Performance” IEEE Transactions on Electron Devices,Vol. 57, No. 10, pp. 2526, 2010.
Yen-Ting Chen, Hung-Chang Sun, Ching-Fang Huang, Ting-Yun Wu, C. W. Liu, Yuan-Jun Hsu, and Jim-Shone Chen “Capacitorless 1T Memory Cells Using Channel Traps at grain boundaries,” IEEE Electron Device Letters, Vol. 31, No. 10, pp. 1125, 2010.
W. Hsu, C. -Y. Peng, C. -M. Lin, Y. -Y. Chen, Y. -T. Chen, W. -S. Ho, and C. W. Liu,“Flexible single-crystalline Ge p-channel thin-film transistors with Schottky-barrier source/drain on polyimide substrates,” IEEE Electron Device Letters, Vol. 31, No. 5, pp. 422, 2010.
T. -H. Cheng, K. -L. Peng, C. -Y. Ko, C. -Y. Chen, H. -S. Lan, Y. -R. Wu, C. W. Liu, and H. -H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett., Vol. 96, 211108, 2010.
T. M. Lu*, C. -H. Lee, D. C. Tsui, and C. W. Liu, “Integration of complementary circuit and two-dimensional electron gas in a Si/SiGe heterostructure,” Appl. Phys. Lett., Vol. 96, 253103, 2010.
C. -H. Lee, C. W. Liu, H. -T. Chang, and S. W. Lee, “Hexagonal SiGe Quantum Dots and Nanorings on Si(110),” J. Appl. Phys. 107, 056103, 2010
T. -H. Cheng, C. -Y. Ko, C. -Y. Chen, K. -L. Peng, G. -L. Luo, C. W. Liu, and H. -H. Tseng, “Competitiveness between direct and indirect radiative transitions of Ge,” Appl. Phys. Lett., Vol. 96, 091105, 2010.
S. W. Lee, H. T. Chang,C. -H. Lee, S. L. Cheng and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Film, Vol. 518, pp. S196, 2010.
C.-H. Lin* and C. W. Liu, “Metal-oxide-semiconductor SiGe/Si quantum dot infrared photodetectors with delta doping in different positions,” Thin Solid Films, Vol. 518, pp. S237-S240, 2010.

2009

S. W. Lee, C. -H. Lee, H. T. Chang, S. L. Cheng and C. W. Liu, “Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Film, Vol. 517, pp. 5029, 2009
W. -L. Hsu, Y. -H. Pai, F. -S. Meng, C. W. Liu, and G. -R. Lin, “Nanograin crystalline transformation enhanced UV transparency of annealing refined indium tin oxide film,” Appl. Phys. Lett., Vol. 93(23), 231906 - 231906-3, 2009.
C.-Y. Peng, Y.-C. Fu, C.-F. Huang, Y.-J. Yang, S.-T. Chang, and C.W. Liu, “Effects of Applied Mechanical Uniaxial and Biaxial Tensile Strain on the Flatband Voltage of (001), (110), and (111) Metal-Oxide-Silicon Capacitors,” IEEE Trans. on Electron Devices, Vol. 56, No. 8, pp. 1736-1745, 2009.
W. S. Ho, Y.-H. Dai, Y. Deng, C.-H. Lin, Y.-Y. Chen, C.-H. Lee, and C. W. Liu, “Flexible Ge-on-Polyimide detectors,” Appl. Phys. Lett., Vol. 94, 261107, 2009.
T. M. Lu*, D. C. Tsui, C. -H. Lee and C. W. Liu, “Observation of two-dimensional electron gas in a Si quantum well with mobility of 1.6×106 cm2/Vs,” Appl. Phys. Lett., Vol. 94, 182102, 2009.
C.-Y. Peng, C.-F. Huang, Y.-C. Fu, Y.-H. Yang, C.-Y. Lai, S.-T. Chang, and C. W. Liu, “Comprehensive study of the Raman shifts of strained silicon and germanium,” J. Appl. Phys., Vol. 105, 083537, 2009.
P.-S. Kuo, C.-Y. Peng, C.-H. Lee, Y.-Y. Shen, H.-C. Chang, and C. W. Liu, “Si/Si0.2Ge0.8/Si quantum well Schottky barrier diodes,” Appl. Phys. Lett., Vol. 94, 103512, 2009.
T.-H. Cheng, P.-S. Kuo, C.-Y. Ko, and C.-Y. Chen, and C. W. Liu, “Electroluminescence from monocrystalline silicon solar cell,” J. Appl. Phys., Vol. 105, 106107,2009.
C.-H. Lin, Y.-J. Yang, E. Encinas, W.-Y. Chen, J.-J. Tsai, and C. W. Liu, “Single crystalline film on glass for thin film solar cells,” J. Nanosci. Nanotech., Vol. 9, No. 6, pp. 3622-3626, 2009.
C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys

2008

S.-R. Jan, T.-H. Cheng, T.-A. Hung, P.-S. Kuo, M. H. Liao, Y. Deng, and C. W. Liu, “Blue Electroluminescence From Metal/Oxide/6H-SiC Tunneling Diodes,” IEEE Trans. on Electron Devices, Vol. 55, No. 12, pp. 3590-3593, 2008.
C.-F. Huang, C.-Y. Peng, Y.-J. Yang, H.-C. Sun, H.-C. Chang, P.-S. Kuo, H.-L. Chang, C.-Z. Liu, and C. W. Liu, “Stress-induced hump effects of p-channel polycrystalline silicon thin-film transistors,” IEEE Electron Device Letters, Vol. 29, No. 12, pp. 1332-1335, 2008.
C.-H. Lin, C.-Y. Yu, C.-C. Chang, C.-H. Lee, Y.-J. Yang, W. S. Ho, Y.-Y. Chen, M. H. Liao, C.-T. Cho, C.-Y. Peng, and C. W. Liu, “SiGe/Si Quantum-Dot Infrared Photodetectors With δ doping,” IEEE Trans. Nanotech., Vol. 7, No. 5, pp. 558-564, 2008.
W.-S. Liao, Y.-G. Liaw, M.-C. Tang, S. Chakraborty, and C. W. Liu, “Investigation of Reliability Characteristics in NMOS and PMOS FinFETs," IEEE Electron Device Letters, Vol. 29, No. 7, pp. 788-790, 2008.
H.-L. Chang, P.-S. Kuo, W.-C. Hua, C.-P. Lin, C.-Y. Lin, and C. W. Liu, “Reduction of crosstalk between dual power amplifiers using laser treatment,” IEEE Microwave. Wireless Compon. Lett., Vol. 18, No. 9, pp. 602-604, Sep. 2008.
C.-H. Lee, C.-Y. Yu, C. M. Lin, C. W. Liu, H. Lin, and W.-H. Chang, “Carrier gas effects on the SiGe quantum dots formation,” Applied Surface Science, Vol. 254, No. 19, pp. 6257-6260, 2008.
S. W. Lee, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C.-H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C2H4 mediation by ultra-high vacuum chemical vapor deposition,” Applied Surface Science, Vol. 254, No. 19, pp. 6261-6264, 2008.
P. S. Chen, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe stacked layers by Si pre-intermixing”, Applied Surface Science, Vol. 254, No. 19, pp. 6076-6080, 2008.
W.-S. Liao, S.-Y. Huang, M.-C. Tang, Y.-G Liaw, K.-M. Chen, Tommy Shih, H.-C. Tsen, L. Chung, and C. W. Liu, “Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining,” Jpn J. Appl. Phys. L3127-3129, April, 2008.
M. H. Liao, Lingyen Yeh, T.-L. Lee, C. W. Liu and M.-S. Liang, “Superior n-MOSFET performance by optimal stress design,” IEEE Electron Device Letters, 29(4), pp. 402-404, 2008.
T.-H. Cheng, M. H. Liao, Lingyen Yeh, T.-L. Lee, M.-S. Liang, and C. W. Liu, “Digital communication using Ge metal-insulator-semiconductor light-emitting diodes and photodetectors,” J. Appl. Phys.,103, 016103, 2008.
M. H. Liao, T.-H. Cheng, C. W. Liu, Lingyen Yeh, T.-L. Lee, and M.-S. Liang, “2.0 μm electroluminescence from the Si/Si0.2Ge0.8 type II heterojunction,” J. Appl. Phys., Vol. 103, 013105, 2008.
W.-S. Liao, Y.-G. Liaw, M.-C. Tang, K.-M. Chen, S.-Y. Huang, C.-Y. Peng, and C. W. Liu, “PMOS hole mobility enhancement through SiGe conductive channel and highly compressive ILD-SiNx stressing layer,” IEEE Electron Device Letters, Vol. 29, No. 1, pp. 86-88, 2008.

2007

S. Maikap, M. H. Lee, S. T. Chang, and C. W. Liu, “Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate,” Semicond. Sci. Technol, Vol. 22 pp. 342-347, 2007.
P.-S. Kuo, Y.-C. Fu, C.-C. Chang, C.-H. Lee and C. W. Liu, “Dark current reduction of Ge MOS photodetectors by high work function electrodes,” Electronics Lett., Vol. 43, Issue. 20, pp. 1113-1114, 2007.
Y.-J. Yang, W. S. Ho, C.-F. Huang, S. T. Chang, and C. W. Liu, “Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect-transistors,” Appl. Phys. Lett., Vol. 91, 102103, 2007; also in Virtual Journal of Nanoscale Science & Technology, Vol. 16, Issue. 12, 2007.
M. H. Liao, C.-H. Lee, T.-A. Hung, and C. W. Liu, “The intermixing and strain effects on electroluminescence of SiGe dots,” J. Appl. Phys., Vol. 102, 053520, 2007.
P.-S. Kuo, C.-H. Lin, C.-Y. Peng, Y.-C. Fu, and C. W. Liu, “Transport mechanism of SiGe dot MOS tunneling diodes,” IEEE Electron Device Letters, Vol. 28, No. 7, pp. 596-598, 2007.
C.-H. Lin, Y.-T. Chiang, C.-C. Hsu, C.-H. Lee, C.-F. Huang, C.-H. Lai, T.-H. Cheng, and C. W. Liu “Ge-on-glass Detectors,” Appl. Phys. Lett., Vol. 91, 041105, 2007.
T.-C. Chen, C.-Y. Peng, M. H. Liao, C.-H. Tseng, P.-S. Chen, M.-Y. Chern, and C. W. Liu, “Characterization of the ultrathin HfO2 and Hf-silicate films grown by atomic layer deposition,” IEEE Trans. on Electron Devices, Vol. 54, pp. 759-776, 2007.
C.-H. Lin, C.-Y. Yu, C.-Y. Peng, W.-S. Ho and C. W. Liu, “Broadband SiGe/Si quantum dot infrared photodetectors,” J. Appl. Phys., Vol. 101, No. 3, 033117, 2007.
C.-Y. Peng, F. Yuan, M. H. Lee, C.-Y. Yu, S. Maikap, S. T. Chang, P.-S. Kuo, and C. W. Liu, “Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si,” Appl. Phys. Lett., Vol. 90, 012114, 2007.
W.-C. Hua, H.-L. Chang, T. Wang, C.-Y. Lin, C.-P. Lin, S. S. Lu, C. C. Meng, and C. W. Liu, “Performance enhancement of the nMOSFET low noise amplifier by package strain,” IEEE Trans. Electron Devices, Vol. 54, No. 1, pp. 160-162, Jan. 2007.

2006

M. H. Liao, T.-H. Cheng, and C. W. Liu, “Infrared emission from Ge metal-insulator-semiconductor tunneling diodes,” Appl. Phys. Lett., Vol. 89, 261913, 2006.
C.-Y. Yu, C.-J. Lee, C.-Y. Lee, J.-T. Lee, M. H. Liao, and C. W. Liu, “The Buckling Characteristics of SiGe Layers on Viscous Oxide,” J. of Appl. Phys., Vol. 100, 063510, 2006.
C.-Y. Yu, C.-Y. Lee, C.-H. Lin, and C. W. Liu, “Low-Temperature Fabrication and characterization of Ge-on-Insulator structures,” Appl. Phys. Lett., Vol. 89, 101913, 2006.
C.-F. Huang, Y.-J. Yang, C.-Y. Peng, F. Yuan, and C. W. Liu, “Mechanical Strain Effect of N-channel Poly-Si Thin-Film Transistors,” Appl. Phys. Lett., Vol. 89, 103502, 2006.
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “Hole Confinement and 1/f Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal-Oxide-Semiconductor Field-Effect Transistors,” Part1 Lett., Jpn. J. Appl. Phys., Vol. 45, No. 5A, pp. 4006-4008, 2006.
S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen*, P. S. Chen, L. J. Chou, and C. W. Liu, “Field emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 218-221, 2006.
S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen*, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films, Vol. 508, pp. 120-123, 2006.
J.-W. Shi, P.-H. Chiu, F.-H. Huang, and Y.-S. Wu, Ja-Yu Lu, C.-K. Sun, and C. W. Liu, P.-S. Chen, “Si/SiGe-Based Edge-Coupled Photodiode with Partially P-Doped Photo-absorption Layer for High Responsivity and High-Power Performance,” Appl. Phys. Lett., Vol. 88, 193506, 2006.
M. H. Liao, P.-S. Kuo, S.-R. Jan, S.-T. Chang, C. W. Liu, “Strained Pt Schottky diodes on n-type Si and Ge,” Appl. Phys. Lett., Vol. 88, 143509, 2006.
M. H. Liao, C.-Y. Yu, T.-H. Guo, C.-H. Lin, and C. W. Liu, “Electroluminescence from the Ge quantum dot metal-oxide-semiconductor tunneling diodes,” IEEE Electron Device Letters, Vol. 27, No.4, pp. 252-254, 2006
F. Yuan, C.-F. Huang, M.-H. Yu, and C. W. Liu, “Performance Enhancement of Ring Oscillators and Transimpedance Amplifiers by Package Strain,” IEEE Trans. on Electron Devices, Vol. 53, No. 4, pp. 724-729, 2006.
C.-H. Lin, C.-Y. Yu, P.-S. Kuo, C.-C. Chang, T.-H. Kuo, and C. W. Liu, “Delta-doped MOS Ge/Si Quantum Dot/Well Infrared Photodetector,” Thin Solid Films, Vol. 508, pp. 389-392, 2006.
P. S. Chen, S. W. Lee, M. H. Lee and C. W. Liu, “Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs, ” Semicond. Sci. Technol, Vol. 21, pp. 479-485, 2006.
J.-Y. Wei, S. Maikap, M. H. Lee, C. C. Lee, and C. W. Liu, “Hole confinement at Si/SiGe heterojunction of strained-Si N and PMOS devices,” Solid State Electronics, Vol. 50, pp. 109-113, 2006.
S. L. Wu, Y. M. Lin, S. J. Chang, S. C. Lu, P. S. Chen, and C. W. Liu, “Enhanced CMOS Performances Using Substrate Strained-SiGe and Mechanical Strained-Si Technology,” IEEE Electron Device Letters, Vol. 27, No. 1, pp. 46-48, 2006.

2005

Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen, C. W. Liu, “SiGe/Si PMOSFET using graded channel technique,” Materials Science in Semiconductor Processing, Vol. 8, pp. 347-351, 2005.
S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M.-J. Tsai, and C. W. Liu, “Formation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys., Vol. 98, pp. 073506, 2005.
C. C. Yeo, B. J. Cho, F. Gao, S. J. Lee, M. H. Lee, C.-Y. Yu, C. W. Liu, L. J. Tang, and T. W. Lee, “Electron Mobility Enhancement Using Ultrathin Pure Ge on Si Substrate,” IEEE Electron Device Letters, Vol. 26, No. 10, pp. 761-763, 2005.
“Invited” C. W. Liu, S. Maikap, and C.-Y. Yu, “Mobility-enhancement Technologies,” IEEE Circuit and Device Magazine, Vol. 21, No. 3, pp. 21-36, May, 2005.
S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yGey layer,” J. Vac. Sci. Tech. A, Vol. 23, No. 4, pp.1141-1145, 2005.
K. F. Liao, S. W. Lee, L. J. Chen, P. S. Chen, and C. W. Liu, “Formation of thin relaxed SiGe buffer layer with H-implantation dose and thermal annealing,” Nuclear Inst. and Methods in Physics Research, B, Vol. 237, No. 1-2, pp. 217-222, 2005.
W.-C. Hua, M. H. Lee, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “Threading Dislocation Induced Low Frequency Noise in Strained-Si nMOSFETs,” IEEE Electron Device Letters, Vol. 26, No. 9, pp. 667-669, 2005.
M. H. Liao, S. T. Chang, M. H. Lee, S. Maikap, and C. W. Liu, “Abnormal hole mobility of biaxial strained Si,” J. Appl. Phys., Vol. 98, pp. 066104, 2005.
M.-H. Liao, T. C. Chen, M. J. Chen, and C. W. Liu, “Electroluminescence from metal/oxide/strained-Si tunneling diodes,” Appl. Phys. Lett., Vol. 86, No. 22, 223502, 2005.
C.-Y. Yu, P.-W. Chen, S.-R. Jan, M.-H. Liao, K.-F. Liao, and C. W. Liu, “Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers,” Appl. Phys. Lett., Vol. 86, No. 1, 011909, 2005.
T. C. Chen, L. S. Lee, W. Z. Lai and C. W. Liu, “The Characteristic of HfO2 on Strained SiGe,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 209-213, 2005.
P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M.-J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si1-x-yGexCy thin films on Si(001) with ethylene (C2H4) precursor as carbon source,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 15-19, 2005.
K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, and C. W. Liu, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing,” Nucl. Instr. Methods B. 237, 217-222 (2005.)
Y. M. Lin, S. L. Wu, S. J. Chang, P. S. Chen and C. W. Liu, “SiGe/Si PMOSFET Using Graded Channel Technique,” Materials Science in Semiconductor Processing, Vol. 8, No. 1-3, pp. 347-351, 2005.

2004

P. S. Chen, S. W. Lee, Y. H. Peng, C. W. Liu, and M.-J. Tsai, “Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer,” Phys. Stat. Sol. (b), Vol. 241, No. 15, pp. 3650-3655, 2004.
C. W. Liu, M. H. Lee, Y. C. Lee, P. S. Chen, C.-Y. Yu, J.-Y. Wei, and S. Maikap, “Evidence of Si/SiGe heterojunction roughness scattering,” Appl. Phys. Lett., Vol. 85, No. 21, pp. 4947-4949, 2004.
Y. H. Peng, C.-H. Hsu, C. H. Kuan, C. W. Liu, P. S. Chen, M.-J. Tsai, and Y. W. Suen, “The evolution of electroluminescence in Ge quantum-dot diodes with the fold number,” Appl. Phys. Lett., Vol. 85, No. 25, pp. 6107-6109, 2004.
P.-S. Kuo, B.-C. Hsu, P.-W. Chen, P. S. Chen, and C. W. Liu, “Recessed Oxynitride Dots on Self-assembled Ge Quantum Dots Grown by Liquid Phase Deposition,” Electrochemical and Solid-State Letters, Vol. 7, No. 10, pp. G201-G203, 2004.
C. Y. Lin, S. T. Chang, and C. W. Liu, “Hole effective mass in strained Si1-xCx alloys,” J. Appl. Phys., Vol. 96, No. 9, pp. 5037-5041, 2004.
J.-W. Shi, Y.-H. Liu, and C.W.Liu,“Design and Analysis of Separate-Absorption-Transport-Charge-Multiplication Traveling-Wave Avalanche Photodetectors,” IEEE/OSA, Journal of Lightwave Technology, Vol. 22, No. 6, pp. 1583-1590, 2004.
F. Yuan, J.-W. Shi, Z. Pei, and C. W. Liu, “MEXTRAM Modeling of Si/SiGe Heterojunction Phototransistors,” IEEE Trans. on Electron Devices, Vol. 51, No. 6, pp. 870-876, 2004.
S. Maikap, C.-Y. Yu, S.-R. Jan, M. H. Lee, and C. W. Liu, “Mechanically strained strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 1, pp. 40-42, 2004.
Z. Pei, J.-W. Shi, Y.-M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M.-J. Tsai, and C. W. Liu, “Bandwidth Enhancement in an Integratable SiGe phototransistor by Removal of Excessive Carrier,” IEEE Electron Device Letters, Vol. 25, No. 5, pp. 286-288, 2004.
W.-C. Hua, T.-Y. Yang, and C. W. Liu, “The Comparison of Isolation Technologies and Device Models on SiGe Bipolar Low Noise Amplifier,” Applied Surface Science, Vol. 224, No. 1-4, pp. 425-428, 2004.
T. C. Chen, W. Z. Lai, C. Y. Liang, M. J. Chen, L. S. Lee, and C. W. Liu, “Light Emission From Al/HfO2/Silicon Diodes,” J. Appl. Phys., Vol. 95, No. 11, pp. 6486-6488, 2004.
W.-C. Hua, M. H. Lee, P. S. Chen, S. Maikap, C. W. Liu, and K. M. Chen, “Ge Outdiffusion Effect on Flicker Noise in Strained-Si NMOSFETs,” IEEE Electron Device Letters, Vol. 25, No. 10, pp. 693-695, 2004.
F. Yuan, S.-R. Jan, S. Maikap, Y.-H. Liu, C.-S. Liang, and C. W. Liu, “Mechanically strained Si/SiGe HBTs,” IEEE Electron Device Letters, Vol. 25, No. 7, pp. 483-485, 2004.
J.-W. Shi, Z. Pei, F. Yuan, Y.-M. Hsu, C. W. Liu, S. C. Lu, and M.-J. Tsai, “Performance Enhancement of High-Speed SiGe Based Heterojunction Phototransistor with Substrate Terminal,” Appl. Phys. Lett., Vol. 85, No. 14, pp. 2947-2949, 2004.
B.-C. Hsu, C.-H. Lin, P.-S. Kuo, S. T. Chang, P. S. Chen, C. W. Liu, J.-H. Lu, and C. H. Kuan, “Novel MIS Ge-Si Quantum-Dot Infrared Photodetectors,” IEEE Electron Device Letters, Vol. 25, No. 8, pp. 544-546, 2004.
S. T. Chang, C. W. Liu, and S. C. Lu, “Base Transit Time of Graded-Base Si/SiGe HBTs Considering Recombination Lifetime and Velocity Saturation,” Solid State Electronics, Vol. 48, No. 2, pp. 207-215, 2004.
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Applied Surface Science, Vol. 224, No. 1-4, pp. 152-155, 2004.
S. W. Lee, P. S. Chen, M.-J. Tsai , C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Film, Vol. 447-448, pp. 302-305, 2004.

2003

Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, “A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor,” IEEE Electron Device Letters, Vol. 24, No. 10, pp. 643-645, 2003.
M. H. Lee, C.-Y. Yu, F. Yuan, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Reliability Improvement of Rapid Thermal Oxide Using Gas Switching,” IEEE Trans. Semiconductor Manufacturing, Vol. 16, No. 4, pp. 656-659, 2003.
S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled Nanorings in Si-capped Ge quantum dots on (001) Si,” Appl. Phys. Lett., Vol. 85, No. 23, pp. 5283-5285, 2003. (This paper has been selected for the issue of the Virtual Journal of Nanoscale Science & Technology, Vol. 8, No. 26, Dec. 29, 2003.)
(Invited) C. W. Liu and L. J. Chen, “SiGe/Si Heterostructures,” Encyclopedia of Nanoscience and Nanotechnology, American Scientific Publishers, 2003.
M.-J. Chen, J.-F. Chang, J.-L. Yen, C. S. Tsai, E.-Z. Liang, C.-F. Lin, and C. W. Liu, “Electroluminescence and photoluminescence studies on carrier radiative and nonradiative recombinations in metal-oxide-silicon tunneling diodes,” J. Appl. Phys., Vol. 93, No. 7, pp. 4253-4259, 2003.
B.-C. Hsu, S. T. Chang, T.-C. Chen, P.-S. Kuo, P. S. Chen, and C. W. Liu, “A High Efficient 820 nm MOS Ge Quantum Dot Photodetector,” IEEE Electron Device Letters, Vol. 24, No. 5, pp. 318-320, 2003.
C. W. Liu, B.-C. Hsu, K.-F. Chen, M. H. Lee, C.-R. Shie, and P.-S. Chen, “Strain-induced growth of SiO2 dots by liquid phase deposition,” Appl. Phys. Lett., Vol. 82, No. 4, pp. 589-591, 2003. (This paper has been selected for the issue of the Virtual Journal of Nanoscale Science & Technology, Vol. 7, No. 5, Feb. 3, 2003.)
C.-H. Lin, F. Yuan, B.-C Hsu, and C. W. Liu, “Isotope effect of hydrogen release in metal/ oxide/n-silicon tunneling diodes,” Solid-State Electronics, Vol. 47, pp. 1123-1126, 2003.
B.-C. Hsu, W.-C. Hua, C.-R. Shie, K.-F. Chen, and C. W. Liu, “The Growth and Electrical Characteristics of Liquid Phase Deposition SiO2 on Ge,” Electrochemical and Solid State Letters, Vol. 6, No. 2, pp. F9-F11, 2003.

2002

B.-C. Hsu, K.-F. Chen, C.-C. Lai, and C. W. Liu, “Oxide Roughness Effect on Tunneling Current of MOS Diodes,” IEEE Trans. Electron Device, Vol. 49, No. 12, pp. 2204-2208, 2002.
C.-H. Lin, F. Yuan, C.-R. Shie, K.-F. Chen, B.-C. Hsu, M. H. Lee, and C. W. Liu, “Roughness- Enhanced Reliability of MOS Tunneling Diodes,” IEEE Electron Device Letters, Vol. 23, No. 7, pp. 431-433, 2002.
S. T. Chang, C. Y. Lin, and C. W. Liu, “Energy Band Structure of Strained Si1-xCx alloys on Si(001) Substrate,” J. Appl. Phys., Vol. 92, No. 7, pp. 3717-3723, 2002.
S. T. Chang, K.-F. Chen, C.-R. Shie, C. W. Liu, M.-J. Chen, and C.-F. Lin, “The band-edge light emission from the metal-oxide-silicon tunneling diode on (110) substrates,” Solid State Electronics, Vol. 46, No. 8, pp. 1113-1116, 2002.
M. H. Lee, K.-F. Chen, C.-C. Lai, C. W. Liu, W.-W. Pai, M.-J. Chen and C.-F. Lin, “The roughness-enhanced light emission from metal- oxide-silicon light-emitting diodes using very high vacuum prebake,” Part2 Lett., Jpn. J. Appl. Phys., Vol. 41, No. 3B, pp. L326-L328, 2002.

2001

M. H. Lee, C.-H. Lin, and C. W. Liu, “Novel Methods to Incorporate Deuterium in the MOS Structures,” IEEE Electron Device Letters, Vol. 22, No. 11, pp. 519-521, 2001.
M.-J. Chen, C.-F. Lin, M. H. Lee, S. T. Chang, and C. W. Liu, “Carrier lifetime measurement on Electroluminescent Metal-Oxide-Silicon Tunneling Diodes,” Appl. Phys. Lett., Vol. 79, No. 14, pp. 2264-2266, 2001.
C.-H. Lin, B.-C. Hsu, M. H. Lee, and C. W. Liu, “A Comprehensive Study of Inversion Current in MOS Tunneling diodes,” IEEE Trans. Electron Device, Vol. 48, No. 9, pp. 2125-2130, 2001.
B.-C. Hsu, W. T. Liu, C.-H. Lin, and C. W. Liu, “A PMOS Tunneling Photodetector,” IEEE Trans. Electron Device, Vol. 48, No. 8, pp. 1747-1749, 2001.
M. H. Lee and C. W. Liu, “A Novel Illuminator Design in a Rapid Thermal Process,” IEEE Trans. Semiconductor Manufacturing, Vol. 14, No. 2, pp. 152-156, 2001.
C. W. Liu, C.-H. Lin, M. H. Lee, S. T. Chang, Y. H. Liu, M.-J. Chen and C.-F. Lin, “Enhanced reliability of electroluminescence from metal-oxide-silicon tunneling diodes by deuterium incorporation,” Appl. Phys. Lett., Vol. 78, No. 10, pp. 1397-1399, 2001.
C.-F. Lin, M.-J. Chen, S.-W. Chang, P.-F. Chung, E.-Z. Liang, T.-W. Su, and C. W. Liu, “Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide/Si Contact,” Appl. Phys. Lett., Vol. 78, No. 13, pp. 1808-1810, 2001.
C.-H. Lin, M. H. Lee, and C. W. Liu, “Correlation between Si-H/D bond desorption and injected electron energy in MOS tunneling diodes,” Appl. Phys. Lett., Vol. 78, No. 5, pp. 637-639, 2001.
M.-J. Chen, C.-F. Lin, W. T. Liu, S. T. Chang, and C. W. Liu, “Visible and Band-Edge Electroluminescence from ITO/SiO2/Si metal oxide semiconductor structures,” J. Appl. Phys., Vol. 89, No. 1, pp. 323-326, 2001.
C.-F. Lin, M.-J. Chen, E.-Z. Liang, W. T. Liu, and C. W. Liu, “Reduced temperature dependence of luminescence from Silicon due to Field-Induced Carrier Confinement,” Appl. Phys. Lett., Vol. 78, No. 3, pp. 261-263, 2001.
C. W. Liu and Y. D. Tseng, and M. Y. Chern, “Asymmetrical x-ray reflection of SiGeC/Si Heterostructures,” Materials Chemistry and Physics, Vol. 69, No. 1-3, pp. 274-277, 2001. (Best paper award, Materials Chemistry and Physics, 2001.)

2000

C. W. Liu, S. T. Chang, W. T. Liu, M.-J. Chen and C.-F. Lin, “Hot carrier recombination model of visible electroluminescence from metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 26, pp. 4347-4349, 2000.
C. W. Liu, M. H. Lee, S. T. Chang, M.-J. Chen, and C.-F. Lin, “Room-temperature electroluminescence from the metal oxide silicon tunneling diodes on (110) substrates,” Jpn. J. Appl. Phys., Vol. 39, No. 10B, pp. L1016 - L1018, 2000.
C. W. Liu, M. H. Lee, M.-J. Chen, C.-F. Lin, and M. Y. Chern, “Roughness-Enhanced Electroluminescence from Metal Oxide Silicon Tunneling Diodes,” IEEE Electron Device Letters, Vol. 21, No. 12, pp. 601-603, 2000.
C. W. Liu, M.-J. Chen, I. C. Lin, M. H. Lee, and C.-F. Lin, “Temperature dependence of the electron-hole-plasma electroluminescence from the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 77, No. 8, pp. 1111- 1113, 2000.
C. W. Liu, W. T. Liu, M. H. Lee, W. S. Kuo, and B. C. Hsu, “A Novel Photodetector Using MOS Tunneling Structures,” IEEE Electron Device Letters, Vol. 21, No. 6, pp. 307-309, 2000.
C. W. Liu and T. X. Hsieh, “Analytic modeling of the subthreshold behavior in MOSFETs,” Solid State Electronics, Vol. 44, No. 9, pp. 1707-1710, 2000.
C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Infrared Electroluminescence from Metal-Oxide-Semiconductor Structure on Silicon,” Journal of Physics: Condensed Matter, Vol. 12, No. 11, pp. L205-210, 2000.
C. W. Liu, Y. H. Huang, C. Y. Chen, S. Gurtler, C. C. Yang, Y. Chang, and L. P. Chen, “Infrared absorption study of laser induced oxide on Si and SiGe layers,” Materials Chemistry and Physics, Vol. 65, No. 3, pp. 350-353, 2000.
C.-F. Lin, C. W. Liu, M.-J. Chen, M. H. Lee, and I. C. Lin, “Electroluminescence at Si Band gap Energy Based on Metal-oxide-silicon Structures,” J. Appl. Phys., Vol. 87, No. 12, pp. 8793-8795, 2000.
C. W. Liu, M. H. Lee, M.-J. Chen, I. C. Lin, and C-F Lin, “Room-temperature electroluminescence from electron-hole plasmas in the metal oxide silicon tunneling diodes,” Appl. Phys. Lett., Vol. 76, No. 12, pp. 1516-1518, 2000.
C. Y. Chen, K. J. Ma, Y. S. Lin, C. W. Liu, C. Y. Chao, S. Gu, C. W. Hsu, and C. C. Yang, “Formation of Silicon Surface Gratings with High Pulse-Energy UV Laser,” J. Appl. Phys., Vol. 88, No. 11, pp. 6162-6169, 2000.

1999

C. W. Liu, Y. D. Tseng, and Y. S. Huang, “Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition,” Appl. Phys. Lett., Vol. 75, No. 15, pp. 2271-2273, 1999.
C. W. Liu, Y. D. Tseng, M. Y. Chern, C. L. Chang, and J. C. Sturm, “Thermal Stability of Si/SiGeC/Si Quantum Wells Grown by Rapid Thermal Chemical Vapor Deposition,” J. Appl. Phys., Vol. 85, No. 4, pp. 2124-2128, 1999.

1998

C. Y. Lin, C. W. Liu, and L. J. Lee, “Valence Band Properties of Relaxed Ge1-xCx Alloys,” Material Chemistry and Physics, Vol. 52, No. 1, pp. 31-35, 1998.

1997

C. W. Liu and J. C. Sturm, “Low Temperature Chemical Vapor Deposition of β-SiC on (100) Si Using Methylsilane and Device Characteristics,” J. Appl. Phys., Vol. 82, No. 9, pp. 4558-4565, 1997.
C. Y. Lin and C. W. Liu, “Hole Effective Masses of Si1-xCx and Si1-yGey alloys,” Appl. Phys. Lett., Vol. 70, No. 11, pp. 1441-1443, 1997.
C. W. Liu and V. Venkataraman “Growth and Electron Effective Mass Measurements of Strained Si and Si0.94Ge0.06 on Relaxed Si0.62Ge0.38 Buffers Grown by Rapid Thermal Chemical Vapor Deposition,” Material Chemistry and Physics, Vol. 49, No. 1, pp. 29-32, 1997.
C. Y. Chao, C. Y. Chen, C. W. Liu, Y. Chang, and C. C. Yang, “Direct Writing of Silicon Gratings with Highly Coherent ultraviolet Laser,” Appl. Phys. Lett., Vol. 71, No. 17, pp. 2442-2444, 1997.

1996

C. W. Liu, St. A. Amour, J. C. Sturm, Y. Lacroix, M. L. W Thewalt, C. W. Magee, and D. Eaglesham, “Growth and Photoluminescence of High Quality SiGeC Alloy Layers on Si (100) Substrates,” J. Appl. Phys., Vol. 80, No. 5, pp. 3043-3047, 1996.
L. D. Lanzerotti, A. St. Amour, C. W. Liu, J. C. Sturm, J. K. Watanabe, and N. D. Theodore, “Si/Si1-x-yGexCy/Si Heterojunction Bipolar Transistors,” IEEE Electron Device Letters, Vol. 17, No. 7, pp. 334-337, 1996.
St. A. Amour, C. W. Liu, J. C. Sturm, Y. Lacroix, and M. L. W Thewalt, “Defect-Free Band-Edge Photoluminescence and Bandgap Measurement of Pseudomorphic SiGeC Alloy Layers on Si (100),” Appl. Phys. Lett., Vol. 67, No. 26, pp. 3915-3917, 1995; also in Appl. Phys. Lett., Vol. 68, No. 8, pp. 1169, 1996.

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