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2025
  1. Y.-W. Li, T.-H. Liu, and C.-H. Wu, “6-GHz Bandwidth and Sub-0.01% Nonlinearity in 1.55-μm DFB Laser for FMCW LiDAR Systems,” IEEE Photonic Conference (IPC 2025), Singapore.
  2. T.-H. Liu, Y.-H. Lu, Y.-Y. Tu, and C.-H. Wu, “Above 120 mW Monolithic Dual-Wavelength DFB Laser with 5 Gb/s Data Transmission for High Performance THz Systems,” 30th OptoElectronics and Communications Conference (OECC 2025), Sapporo, Japan.
  3. C. E. Chen, S.-M. Huang, M.-C. Hsu, T.-J. Wang, J.-I. Lin, H.-Y. Tu, S.-F. Yeh, C. Y.-P. Chao, J.-Y. Wu, and C. H. Wu, “First Demonstration of Room Temperature SWIR Flash LiDAR Using a 160 × 116 Ge-on-Si SPAD Array,” Conference on Lasers and Electro-Optics (CLEO 2025), Long Beach, CA, USA, May 2025 (Postdeadline Paper).
  4. T. H. Liu, and C. H. Wu, “Sub-25 kHz Intrinsic Linewidth and 90 mW Optical Power in 1.55 µm DFB Laser for Advanced Photonics Applications,” OPTICS & PHOTONICS International Congress, Yokohama, Japan, Apr. 2025 (no. OWPTp-05).
  5. T. H. Liu, Y. Y. Tu, Y. H. Lu, and C. H. Wu, “Monolithic Dual-Wavelength DFB Laser with Over 140 mW Optical Power and Frequency Noise Floor Below 2.15 × 10⁴ Hz²/Hz for High-Precision THz Systems,” International Conference on Compound Semiconductor Manufacturing Technology, Louisiana, USA, May 2025 (no. 2B.4).
  6. Y. C. Yang, Z. Wan, C. C. Chiu, I. C. Liu, G. Xia, and C. H. Wu, “53.125 Gbps PAM-4 transmission up to 75˚C using VCSELs on 330 µm Ge substrates for datacom applications,” SPIE Photonics West, California, USA, Jan. 2025.
2024
  1. T. H. Liu, Y. Y. Tu, H.C. Kuo, and C. H. Wu, “Uncooled High-Power 1.31-μm DFB Laser for High Efficiency Co-Packaged Optics Applications,” Optics & Photonics Taiwan, International Conference, Taipei, Taiwan, Dec. 2024. (no. 2024-WED-S0302-O003).
  2. T. H. Liu, and C. H. Wu, “High-Power 1.55-μm DFB Laser with Below 100 kHz Linewidth and 12 Gb/s PAM-4 Transmission for Advanced Sensing and Communication Platform,” 29th Microoptics Conference, Kaohsiung, Taiwan, Sep. 2024. (no.0123)
  3. C. E. Chen, J.-Y. Wu, and C. H. Wu, “Structural Design of High-Temperature Operable Ge-on-Si Single-Photon Avalanche Photodiode at Wavelengths 1310 nm,” Solid-State Devices and Materials (SSDM) 2024, Himeji, Japan, Sept. 2024.
  4. C. C. Chiu, Y. C. Yang, Z. Wan, I. C. Liu, W. H. Chen, G. Xia, and C. H. Wu, “High-Performance 940 nm Ge-based VCSEL with an Over 16.8 GHz Modulation Bandwidth at 85 ⁰C,” 16th Pacific Rim Conference on Lasers and Electro-Optics, Incheon, Korea, Aug. 2024. (no. 11_2046)
  5. M. Kumar, K. Y. Hsueh, Y. J. Huang, G. J. Lai, and C. H. Wu, “Enhancing Thermal Sensing with Cascaded Quantum-Well Heterojunction Bipolar Transistors in Darlington Transistor Configuration,” 16th Pacific Rim Conference on Lasers and Electro-Optics, Incheon, Korea, Aug. 2024. (no. 11_1296)
  6. T. H. Liu, Y. Y. Tu, and C. H. Wu, “High-Power C-band DFB Lasers with Sub-50 kHz Linewidth for Precise FMCW LiDAR,” 16th Pacific Rim Conference on Lasers and Electro-Optic, Incheon, Korea, Aug. 2024. (no. 11_1398)
  7. T. H. Liu, S. T. Huang, Y. C. Yang, and C. H. Wu, “High-Temperature 53.12 Gb/s PAM4 Transmission of 1.3- µm DFB Lasers for 400 GbE optical communication,” 16th Pacific Rim Conference on Lasers and Electro-Optics, Incheon, Korea, Aug. 2024. (no. 11_1055)
  8. J. Y. Lim, T. H. Liu, Y. H. Hong, H. C. Kuo, and C. H. Wu, “Characterization of 940 nm PCSEL Under Nanosecond Pulsed Operation with Peak Power of Up to 3.12 W,” 16th Pacific Rim Conference on Lasers and Electro-Optics, Incheon, Korea, Aug. 2024. (no. 08_1405)
  9. C. E. Chen, N. Prechatavanich, and C. H. Wu, “Innovative Attached Step Guard Ring Design for Edge Breakdown Suppression in Avalanche Photodiodes,” OptoElectronics and Communications Conference, Melbourne, Australia, Jan. 2024.
  10. M. Kumar, K. Y. Hsueh, Y. J. Huang, and C. H. Wu, “A Darlington Transistor Using Cascaded n-p-n Light-Emitting Transistors for Temperature Sensor Applications,” 82nd Device Research Conference, Maryland, USA, May 2024.
  11. T. Y. Wu, J. Z. Chen, Y. C. Yang and C. H. Wu, “Elliptical-Apertured 850-nm VCSEL Enabling Reduced RMS Linewidth and Enhanced Output Power,” Conference on Lasers and Electro-Optics Pacific Rim, Incheon, Korea, Aug. 2024.
  12. Y. C. Yang, Z. Wan, C. Chiu, W. Chen, G. Hsu, M. Feifel, D. Lackner, G. Xia, and C. H. Wu, “High-speed 940 nm Ge-VCSEL with an Over 15 GHz Modulation Bandwidth at 85 °C,” Conference on Lasers and Electro-Optics, Charlotte, USA, May 2024. (no. JTu2A.27.)
  13. Y. L. Huang, P. H. Hsu, Y. H. Lu, R. H. Zhang, and C. H. Wu, “Small-Signal Modeling of Double-Channel Fin-HEMT with Unique RF Characteristics,” International Electron Devices & Materials Symposium, Taichung, Taiwan, Aug. 2024.
  14. H. L. Lo, P. H. Hsu, F. T. Lin, H. Li, Y. R. Wu, and C. H. Wu, “Quaternary Compound Semiconductor InAlGaN/GaN HEMT in Nano-Scale Gate,” International Electron Devices & Materials Symposium, Taichung, Taiwan, Aug. 2024.
  15. Y. J. Huang, S. J. Hsu, K. Y. Hsueh, S. Y. Ho, L. Yang, C. H. Wu, “Bulged Effect of different structures on InGaAs/GaAs Heterojunction Phototransistor,” International Electron Devices & Materials Symposium, Taichung, Taiwan, Aug. 2024.
  16. L. W. Lin, T. Y. Huang, Y. H. Lu, and C. H. Wu, “Temperature-Dependent Electrical Performance Analysis of Multi-Finger P-GaN HEMT,” International Electron Devices & Materials Symposium, Taichung, Taiwan, Aug. 2024.
  17. R. H. Zhang, P. H. Hsu, Y. H. Lu, and C. H. Wu, “Optimizing Cryogenic Temperature Performance of Double-Channel Planar GaN HEMT,” International Electron Devices & Materials Symposium, Taichung, Taiwan, Aug. 2024.
2023
  1. Y. H. Huang, H. Chintam, C. H. Wu, C. W. Chu, and S. Y. Lin, “Bifacial Perovskite Solar Cells with Gold Transparent Electrodes Grown on Molybdenum Disulfide,” Optics & Photonics Taiwan, International Conference, Tainan, Taiwan, Dec. 2023.
  2. C. C. Chiu, Y. C. Yang, W. H. Chen, G. T. Hsu, and C. H. Wu, “High-Speed 106.25 Gb/s VCSELs for 800G Datacom and Telecom Applications,” 28th Optics & Photonics Taiwan, International Conference, Tainan, Taiwan, Dec. 2023.
  3. C. K. Yee, P. Natchanon, M. J. Wu, and C. H. Wu, “Measurement of Red AlGaInP-based micro-LED Arrays with Light Output Enhancement Using Surface Roughness,” 28th Optics & Photonics Taiwan, International Conference, Tainan, Taiwan, Dec. 2023.
  4. S. J. Hsu, S. W. Cheng, S. Y. Ho, P. C. Li, M. Kumar, and C. H. Wu, “The Impact of Mesa Size Scaling on Heterojunction Bipolar Light-Emitting Transistor in Optoelectronic Logic Gate Applications,” 28th Optics & Photonics Taiwan, International Conference, Tainan, Taiwan, Dec. 2023.
  5. T. H. Liu, S. P. Yang, J. Y. Wu, and C. H. Wu, “Realizing High Efficiency, Ensuring Wavelength Stability, and Achieving Watt-Level Pulsed Power in a 1.55-μm DFB Laser,” 28th Optics & Photonics Taiwan, International Conference, Tainan, Taiwan, Dec. 2023. (no. 0411).
  6. S. T. Huang, Y. H. Lu, K. W. Hsiao, and C. H. Wu, “Thermal Analysis of Multi-finger GaN HEMTs,” International Electron Devices & Material Symposium, Kaohsiung, Taiwan, Oct. 2023.
  7. M. Kumar, S. Y. Ho, S. J. Hsu, P. C. Li, S. W. Cheng, and C. H. Wu, “High Temperature Operation of Triple-Quantum Well Light Emitting Transistor for Smart Thermal Sensor Application,” International Electron Devices & Materials Symposium, Kaohsiung, Taiwan, Oct. 2023.
  8. S. J. Hsu, S. Y. Ho, P. C. Li, M. Kumar, and C. H. Wu, “Effects of Mesa Size Scaling on Optoelectronic Logic Gate Performance Using Heterojunction Bipolar Light Emitting Transistors,” International Electron Devices & Material Symposium, Kaohsiung, Taiwan, Oct. 2023.
  9. S. P. Yang, C. H. Wu, and L. A. Wang, “A novel polished conical silicon-cored-fiber based edge coupler for silicon photonics,” OptoElectronics and Communications Conference, Shanghai, China, Jan. 2023.
  10. T. H. Liu, H. T. Cheng, and C. H. Wu, “1.3 μm Directly Modulated Uncooled DFB Laser with AlGaInAs Ridge for Performance beyond 35 Gbit/s,” Compound Semiconductor Week, Jeju, Korea, Jan. 2023.
  11. M. Kumar, S.W. Cheng, P. C. Li, S. Y. Ho, S. J. Hsu, and C. H. Wu, “Simulation Study of Temperature Effect on Current Gain of Heterojunction Bipolar Light-Emitting Transistors,” Compound Semiconductor Week, Jeju, Korea, Jan. 2023.
  12. T. H. Liu, H. Y. Lin, H. T. Cheng, and C. H. Wu, “1.55 μm DFB Laser with ns-level pulses for LiDAR,” International Conference on Compound Semiconductor Manufacturing Technology, Orlando, FL, USA, May 2023.
  13. H. T. Cheng, T. X. Zhang, Y. C. Yang, T. H. Liu, and C. H. Wu, “Reliability assessment of HTOL stressed VCSELs with camera-based beam profilers,” International Conference on Compound Semiconductor Manufacturing Technology, Orlando, FL, USA, May 2023.
  14. M. Kumar, L. C. Hsueh, S. W. Cheng, S. Y. Ho, S. J. Hsu, and C. H. Wu, “Effect of Quantum-Well Number on the Current Gain of Heterojunction Bipolar Light-Emitting Transistors,” Conference on Lasers and Electro-Optics, San Jose, California, USA, May 2023.
2022
  1. S. W. Cheng, L. C. Hsueh, S. J. Hsu, M. Kumar, and C. H. Wu, “The Development of Integrated Optoelectronic Amplifiers and Thermal Sensors Using Light-Emitting Transistors circuits,” Optics & Photonics Taiwan International Conference, Jungli, Taiwan, Dec. 2022.
  2. C. K. Yee, J. M. Lin, M. J. Wu, H. T. Cheng, and C. H. Wu, “Measurement of Red AlGaInP-based micro-LED Array with Enhancement of Passivation,” Optics & Photonics Taiwan International Conference, Jungli, Taiwan, Dec, 2022.
  3. G. T. Hsu, Y. C. Yang, H. T. Cheng, T. H. Liu, H. C. Yen, and C. H. Wu, “An experimental investigation of the cryogenic characteristics of 850 nm VCSELs,” Optics & Photonics Taiwan International Conference, Jungli, Taiwan, Dec, 2022.
  4. H. T. Cheng, T. X. Zhang, T. H. Liu, G. T. Hsu, H. Y. Lin, and C. H. Wu, “Assessment of HTOL stressed VCSELs using beam profiling techniques,” Optics & Photonics Taiwan International Conference, Zhongli, Taiwan, Dec. 2022.
  5. H. C. Yen, T. H. Liu, C. K. Yee, Y. C. Yang, H. T. Cheng, G. T. Hsu, T. T. Shih, and C. H. Wu, “25-Gb/s 1270-nm InGaAlAs Directly Modulated Laser,” Optics and Photonics Taiwan International Conference, Zhongli, Taiwan, Dec. 2022.
  6. T. H. Liu, H. T. Cheng, H. C. Yen, G. T. Hsu, and C. H. Wu, “Characteristics of High-speed 1.3 µm DFB Laser for Direct Modulation Applications under Commercial Temperature Range,” Optics and Photonics Taiwan International Conference, Zhongli, Taiwan, Dec. 2022.
  7. C. K. Yee, J. M. Lin, M. J. Wu, H. T. Cheng, and C. H. Wu, “Performance Enhancement of Red AlGaInP-based micro-LED Array with Surface Treatment,” International Electron Devices & Material Symposium, Nantou, Taiwan, Oct. 2022.
  8. T. H. Liu, H. T. Cheng, H. C. Yen, G. T. Hsu, and C. H. Wu, “Uncooled 30 Gb/s Direct Modulation of 1.3 μm DFB Laser with AlGaInAs Ridge,” International Electron Devices & Material Symposium, Nantou, Taiwan, Oct. 2022.
  9. H. T. Cheng, T. X. Zhang, T. H. Liu, H. Y. Lin, and C. H. Wu, “Near-field profiling of VCSELs before & after HTOL stress,” International Electron Devices and Materials Symposium, Nantou, Taiwan, Oct. 2022.
  10. P. H. Hsu, Y. C. Chang, and C. H. Wu, “Development and Characterization of Radio Frequency AlInN/GaN HEMTs for Millimeter-Wave Applications,” International Electron Devices & Materials Symposium, Nantou, Taiwan, Oct. 2022.
  11. W. T. Ting, and C. H. Wu, “Design consideration and Optimization of high voltage vertical β-Ga2O3 Schottky barrier diodes with trench staircase field plate,” International Electron Devices & Materials Symposium, Nantou, Taiwan, Oct. 2022.
  12. K. W. Hsiao, and C. H. Wu, “Investigation of multi-finger p-type gate GaN HEMTs with p-GaN layer etching by end-point detection (EPD) method,” International Electron Devices & Materials Symposium, Nantou, Taiwan, Oct. 2022.
  13. W. J. Lu, Y. C. Chang, F. T. Lin, and C. H. Wu, “The effect of T-shaped gate on GaN HEMT for DC and RF performances,” International Electron Devices & Materials Symposium, Nantou, Taiwan, Oct. 2022.
  14. T. H. Liu, H. T. Cheng, H. C. Yen, C. K. Yee, Y. C. Yang, G. T. Hsu, and C. H. Wu, “High power 1.55 µm DFB laser with GHz modulation capability for low-orbit optical communication system,” 28th International Semiconductor Laser Conference, Matsue, Japan, Oct. 2022.
  15. H. C. Yen, T. H. Liu, C. K. Yee, Y. C. Yang, H. T. Cheng, G. T. Hsu, T. T. Shih, and C. H. Wu, “25-Gb/s Uncooled direct-modulation Using 1270-nm InGaAlAs-Based MQWs DFB Laser,” International Conference on Solid State Devices and Materials, Chiba, Japan, Sep. 2022.
  16. H. T. Cheng, T. X. Zhang, Y. C. Yang, T. H. Liu, and C. H. Wu, “Near-field Analysis of VCSELs after HTOL test,” 15th Pacific Rim Conference on Lasers and Electro-Optics, Sapporo, Japan, Jul. 2022.
  17. H. T. Cheng, J. S. Pan, W. H. Lin, and C. H. Wu, “High-Power Zone Control 940 nm VCSEL Array with a Novel Binary Pattern Design for Sensing Applications,” Compound Semiconductor Week, Ann Arbor, MI, USA, May 2022.
  18. Y. C. Chang, T. Y. Huang, H. T. Cheng, and C. H. Wu, “The Effect of Different Barrier Layer Structure on T-shaped Gate High Frequency GaN HEMTs,” Compound Semiconductor Week, Ann Arbor, MI, USA, May 2022.
  19. Y. C. Yang, H. T. Cheng, and C. H. Wu, “Volume manufacturable oxide-confined 850-nm VCSELs operating at 25-50 Gbps up to 105°C without equalization and pre-emphasis,” SPIE Photonics West, San Francisco, CA, USA, Mar. 2022.
2021
  1. Y. C. Yang, H. T. Cheng, and C. H. Wu, “Signal Processing Free 25-50 Gbps Oxide-Confined Vertical-Cavity Surface-Emitting Laser,” Optics and Photonics Taiwan International Conference 2021, Kaohsiung, Taiwan, Dec. 2021.
  2. T. H. Liu, C. Lo, H. T. Cheng, Y. C. Yang and C. H. Wu, “The Influence of Mode Changes of High-Power DFB Laser on Bandwidth Under Various Temperature Condition,” Optics and Photonics Taiwan International Conference, Kaohsiung, Taiwan, Dec. 2021.
  3. M. Kumar, Y. T. Chen, L. C. Hsueh, and C. H. Wu, “Simulation Study of Quantum-Well Heterojunction Bipolar Transistor Structure to Thermally-Enhanced Current Gain for Thermal Sensor Application,” Optics and Photonics Taiwan International Conference, Kaohsiung, Taiwan, Dec. 2021.
  4. Y. T. Chen, Y. T. Liang, and C. H. Wu, “Opto-Electrical NOR Gate Using Light Emitting Transistors Without Resistors,” Optics and Photonics Taiwan International Conference, Kaohsiung, Taiwan, Dec. 2021.
  5. L. C. Hsueh, S. W. Cheng, H. Y. Lin, M. Kumar, and C. H. Wu, “Development of Integrated Optoelectrical Amplifier and High Resolution Smart Thermal Sensor with Light-Emitting Transistors,” Optics and Photonics Taiwan International Conference 2021, Kaohsiung, Taiwan, Dec. 2021.
  6. H. T. Cheng, J. S. Pan, W. H. Lin, Y. C. Yang and C. H. Wu, “VCSEL array with Binary Pattern Distribution for Sensing Applications,” Optics and Photonics Taiwan International Conference, Kaohsiung, Taiwan, Dec. 2021.
  7. L. C. Hsueh, S. W. Cheng, H. Y. Lin, M. Kumar, and C. H. Wu, "The First Demonstration of the Optoelectrical Amplifier and High Resolution Thermal Sensor with Light-Emitting Transistors," International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  8. M. Kumar, L. C. Hsueh, Y. T. Chen and C. H. Wu, “Thermally-Enhanced Current Gain of Light-Emitting Transistors: A Simulation-Based Analysis,” International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  9. Y. C. Chang, Y. J. Luo, W. C. Tzeng, T. Y. Huang, and C. H. Wu, “Investigation on the Electrical and Microwave Characteristics of AlInN/GaN HEMTs on Different Substrates,” International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  10. T. Y. Huang, Y. C. Chang, C. C. Hsu, and C. H. Wu, “Impacts of Asymmetric Gate Metal Structure on the Current Behavior of Normally-OFF p-GaN/AlGaN/GaN HEMTs,” International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  11. T. Y. Huang, Y. C. Chang, Y. C. Chang, and C. H. Wu, “Fabrication and Analysis of High Current p-GaN /AlGaN/GaN HEMTs,” International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  12. Y. C. Yang, H. T. Cheng, G. T. Hsu, T. H. Liu, and C. H. Wu, “Multiple Oxide-Confined High-Speed 850-nm Tri-Mode Vertical -Cavity Surface-Emitting Laser,” International Electron Devices and Materials Symposium, Tainan, Taiwan, Nov. 2021.
  13. Y. C. Chang, Y. J. Lo, T. Y. Huang, and C. H. Wu, “Analysis of Electrical and Microwave Properties on AllnN/GaN HEMTs Structures within Si/SiC Substrates,” Symposium on High Power Semiconductor Materials and Devices, Taipei, Taiwan, Oct. 2021.
  14. T. Y. Huang, Y. C. Chang, Y. C. Chang, and C. H. Wu, “Investigation of Surface Passivation of MS-HEMTs and Fabrication of Enhancement-mode p-GaN /AlGaN/GaN HEMTs”, Symposium on High Power Semiconductor Materials and Devices, Taipei, Taiwan, Oct. 2021.
  15. Y. C. Yang, H. T. Cheng, and C. H. Wu, “30 GHz Highly Damped Oxide Confined Vertical-Cavity Surface-Emitting Laser,” IEEE Photonics Conference, virtual format, Oct. 2021.
  16. T. H. Liu, C. Lo, and C. H. Wu, “The Ridge Width Dependence of Monolithic Dual-Mode Distributed Feedback Laser for continuous-wave Terahertz Generation,” 27th International Semiconductor Laser Conference, Potsdam, Germany, Oct. 2021.
  17. T. H. Liu, C. Lo, H. T. Cheng, Y. C. Yang, and C. H. Wu, “Analysis of the spectral dependent microwave characteristics of 1.3 μm DFB Laser at different temperatures,” 30th Wireless and Optical Communications Conference, Hsinchu, Taiwan, Aug. 2021.
  18. H. T. Cheng, Y. C. Yang, and C. H. Wu, “High thermal stability of 850 nm VCSELs with enhanced mask margin up to 85° C for 100G-SR4 Operation,” 30th Wireless and Optical Communications Conference, Hsinchu, Taiwan, Aug. 2021.
  19. Y. C. Yang, H. T. Cheng, and C. H. Wu, “Ultra-Fast and Highly Efficient 850-nm VCSELs for Next-gen PAM-4 Transceivers,” Asia Communications and Photonics Conference, Shanghai, China, Oct. 2021.
  20. L. C. Hsueh, H. Y. Lin, K. Mukul, and C. H. Wu, “Thermal Dynamic Performance and Integrated Optoelectronic System With InGaP / GaAs Quantum Well Light-Emitting Transistors” Asia Communications and Photonics Conference, Shanghai, China, Oct. 2021.
  21. Y. T. Chen, Y. T. Liang, and C. H. Wu, “Monolithically Integrated Optoelectronic Multiplexer Circuit Using Light Emitting Transistors,” Optoelectronics and Communications Conference, Hong Kong, Jul. 2021.
  22. S. Y. Lee, X. Chen, W. C. Lo, K. Li, C. H. Wang, C. T. Tsai, C. H. Cheng, C. H. Wu, H. C. Kuo, and M. J. Li, “850-nm Dual-Mode VCSEL Carried 53-Gbps NRZ-OOK Transmission in 100-m Graded-Index Single-Mode Fiber,” Optical Fiber Communications Conference and Exhibition, San Francisco, USA, Mar. 2021.
2020
  1. S. Y. Min, H. T. Cheng, J. S. Pan, W. H. Lin, and C. H. Wu, “Oxide-confined VCSEL with metal apertures for high-speed 850nm transmission,” Opto-Electronics and Communications Conference, Taipei, Taiwan, Oct. 2020.
  2. H. T. Cheng, S. Y. Min, J. S. Pan, W. H. Lin, and C. H. Wu, “Single-mode operation of an 850 nm MR VCSEL with a circular metal contact for spatial filtering,” Optics and Photonics Taiwan International Conference, Taipei, Taiwan, Dec. 2020.
  3. W. H. Lin, H. T. Cheng, I. C. Chen, J. S. Pan, and C. H. Wu, “Thermally-stable VCSEL for up to 12.81 GHz operation at 85 °C,” Optics and Photonics Taiwan International Conference, Taipei, Taiwan, Dec. 2020.
  4. Y. T. Liang, Y. T. Huang, and C. H. Wu, “Monolithically Integrated Opto-Electronic SR Latch Using Light Emitting Transistors,” Optics and Photonics Taiwan International Conference, Taipei, Taiwan, Dec. 2020.
  5. Y. T. Liang, Y. T. Huang, and C. H. Wu, “Monolithically Integrated All-Light Input Optical NOR Gate Using Light Emitting Transistors,” International Electron Devices and Materials Symposium, New Taipei City, Taiwan, Oct. 2020.
  6. Y. T. Chao, and C. H. Wu, “An Analysis on Cross Point Structure Resistive Random Access Memory of Tungsten Disulfide,” International Electron Devices and Materials Symposium, New Taipei City, Taiwan, Oct. 2020.
  7. Y. W. Zhang, J. Y. Li, C. H. Wu, S. W. Chang, S. Y. Lin, “Reduced Contact Resistance of Top-gate Tungsten Diselenide Transistors with Multilayer Antimonene Electrodes,” International Electron Devices and Materials Symposium, New Taipei City, Taiwan, Oct. 2020.
  8. Y. J. Luo, W. C. Tzeng, and C. H. Wu, “AlGaN/GaN HEMT with T-shaped Gate for High Frequency Application,” International Electron Devices and Materials Symposium, New Taipei City, Taiwan, Oct. 2020.
  9. Y. J. Luo, I. Sanyal, W. C. Tzeng, Y. L. Ho, Y. C. Chang, C. C. Hsu, J. I. Chyi, and C. H. Wu, “High Electron Mobility of 1880 cm 2 VS In 0.17 Al 0.83 N/GaN-on-Si HEMTs with GaN Cap Layer,” IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, Suita, Japan, Sep. 2020.
  10. W. C. Lo, W. L. Wu, C. Y. Peng, H. Y. Wang, C. T. Tsai, B. Su, C. H. Wu, and G. R. Lin, “Multimode VCSEL Enables Multi-Data-Format Encoding up to 124 Gbit/s,” Conference on Lasers and Electro-Optics, San Jose, CA, USA, May. 2020.
  11. Y. T. Liang, Y. T. Huang, C. H. Wu, and H. Y. Lin, “Monolithically Integrated Opto-Electrical NOR Gate Using Light Emitting Transistors,” Opto-Electronics and Communications Conference, Taipei, Taiwan, Oct. 2020.
2019
  1. Hao-Tien Cheng, Cheng-Han Wu, Wenning Fu, Hsiao-Lun Wang, Milton Feng, and Chao-Hsin Wu, "Cryogenic operation of a high speed 850 nm VCSEL with 40.1 GHz modulation bandwidth at 223 K," in 2020 Opto-Electronics and Communications Conference (OECC), 2020: IEEE, pp. 1-3.
  2. Tzu-Heng Wang, Ting-Syuan Lin and Chao-Hsin Wu, “Annealing Improved N-type and P-type WSe2 Field Effect Transistors for CMOS application,” International Electron Devices & materials symposium 2019 (IEDMS), October. 2019
  3. Wei Cheng Tzeng, Li-Cheng Chang, Yu-En Jeng, Yung-Ting Ho and Chao-Hsin Wu, “Resarch on Material and Electrical Characteristics of AlGaN/GaN-on-Si HEMTs Fabricated on Different Buffer Layer,” International Electron Devices & materials symposium 2019 (IEDMS), October. 2019
  4. Wei-Li Wu, Cheng-Yi Huang, Huai-Yung Wang, Yu-Hong Lin, Cheng-Han Wu, Hao-Chung Kuo, Wood-Hi Cheng, Chao-Hsin Wu, Milton Feng, and Gong-Ru Lin, "VCSEL with bi-layer oxidized aperture enables 140-Gbit/s OFDM transmission over 100-m-long OM5 MMF," in 2019 Optical Fiber Communications Conference and Exhibition (OFC), 2019: IEEE, pp. 1-3.
  5. Wei-Cheng Tzeng, Yu-En Jeng, Li-Cheng Chang, Yung-Ting Ho, Chao-Hsin Wu, and Chih-Chao Hsu, "Investigation on Diffferent Buffer to Supress the RF-Loss in AlGaN/GaN-on-Si HEMTs," in 2019 IEEE 4th International Future Energy Electronics Conference (IFEEC), 2019: IEEE, pp. 1-3.
  6. Yi-Ting Chen, Li-Cheng Chan, Yu-Li Ho, Yung-Ting Ho, and Chao-Hsin Wu, "Small Signal Modeling of GaN-on-Si HEMT with Leaky Buffer," in 2019 IEEE 4th International Future Energy Electronics Conference (IFEEC), 2019: IEEE, pp. 1-3.
  7. Chien-Ting Tung, Shu-Wei Chang, and Chao-Hsin Wu, "Pulse compression using chirp of transistor lasers regardless of types of fiber dispersions," in The European Conference on Lasers and Electro-Optics, 2019: Optical Society of America, p. cb_p_50.
  8. Hsiang-Yun Shih, Yu-Yun Cho, Shun-Chieh Hsu, Yu-Ming Huang, Shou-Wei Wang, Huang-Hsiung Huang, Chao-Hsin Wu, Yen-Wei Yeh, Yun-Ting Lu, and Hao-Chung Kuo, "Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL," in 2019 IEEE Photonics Conference (IPC), 2019: IEEE, pp. 1-2.
  9. Yun-Ting Huang, Hsuan-Han Chen, and Chao-Hsin Wu, “Monolithically Integrated Optical OR Gate Using Light-Emitting Transistors”, 2019 International Conference on Solid State Devices and Materials (SSDM), Nagoya, Japan, September, 2019, B6-01
  10. Yun-Ting Huang, Hsuan-Han Chen, and Chao-Hsin Wu, “Monolithically Integrated Optical NOR Gate Using Light-Emitting Transistors”, 2019 Optics & Photonics Taiwan International Conference (OPTIC 2019), Taichung, Taiwan, Dec, 2019
  11. Li-Cheng Chang, Cheng-Jia Dai, Kai-Chieh Hsu, Chao-Hsin Wu, "Investigation of the Early Pinch-Off Effect of AlGaN/GaN Schottky-Gate Fin-HEMTs and its Threshold Voltage Modulation", International Conference on Nitride Semiconductors (ICNS), July, 2019
  12. Piotr Martyniuk, Krystian Michalczewski, Tsung Yin Tsai, Chao-Hsin Wu, and Yuh-Renn Wu, "Thermoelectrically Cooled nBn T2SLs InAs/InAsSb/B-AlAsSb MWIR Detector," in 2019 Compound Semiconductor Week (CSW), 2019: IEEE, pp. 1-2.
  13. Yuh-Renn Wu, Tsung-Yin Tsai, Chao-Hsin Wu, Krystian Michalczewski, and Piotr Martyniuk, “Investigation of type-II superlattices InAs/InAsSb photoconductor system by 8×8 k∙p model and application of localization landscape theory for transport,” 2019 Compound Semiconductor Week (CSW), Nara, Japan, WeB2-4, May 2019
  14. Piotr Martyniuk, Krystian Michalczewski, Tsung-Yin Tsai, Chao-Hsin Wu and Y Yuh-Renn Wu, "Theoretical simulation of the barrier T2SLs InAs/InAsSb/B-AlSb longwave detector operating under thermoelectrical cooling," 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Ottawa, ON, Canada, TuP01, July 2019
  15. Ting-Yu Huang, Junyi Qiu, Cheng-Han Wu, Hao-Tien Cheng, Milton Feng, Hao-Chung Kuo, and Chao-Hsin Wu, "A NRZ-OOK modulated 850-nm VCSEL with 54 Gb/s error-free data transmission," in 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2019: IEEE, pp. 1-1.
  16. Chao-Hsin Wu, Hsuan-Han Chen, and Chi-Wei Wang, “Realization of Opto-electronic Logic Gates Using Three-port Light-emitting Transistors,” Photonics and Electromagnetics Research Symposium (PIERS), Rome, 2019, 4P19a#4
  17. Yu-Wei Zhang, Jun-Yen Lee, Chao-Hsin Wu, and Shin-Yen Lee, “Complete selenization of MoS2 to from wafer-scale and layer number controllable MoSe2 films,” Graphene Week 2018, Feb. 2019
2018
  1. Yu-En Jeng, Li-Cheng Chang, Kai-Chieh Hsu, Yung-Ting Ho and Chao-Hsin Wu, “RF-Loss Suppression of AlGaN/GaN-on-Si HEMT With Superlattice Buffer,” 7th International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Poland, August, 2018, Paper#Fr2.5
  2. Wei-Li Wu, Cheng-Yi Huang, Huai-Yung Wang, Cheng-Han Wu, Chun-Yen Peng, Hao-Chung Kuo, Chao-Hsin Wu, and Gong-Ru Lin, "RC Time Constant and Resistance Reduced VCSEL for Broadband QAM-OFDM," in 2018 European Conference on Optical Communication (ECOC), 2018: IEEE, pp. 1-3.
  3. Cheng-Han Wu, Ting-Yu Huang, Junyi Qiu, Wenning Fu, Chun-Yen Peng, Tien-Tsorng Shih, Jian-Jang Huang, Hao-Chung Kuo, Gona-Ru Lin, Wood-Hi Cheng, Milton Feng, and Chao-Hsin Wu, "50 Gb/s error-free data transmission using a NRZ-OOK modulated 850 nm VCSEL," in 2018 European Conference on Optical Communication (ECOC), 2018: IEEE, pp. 1-3.
  4. Chien-Ting Tung, Shu-Wei Chang, and Chao-Hsin Wu, "High Speed Data Transmission under Voltage Modulation of Transistor Lasers," in 2018 23rd Opto-Electronics and Communications Conference (OECC), 2018: IEEE, pp. 1-2.
  5. Hsuan-Han Chen, Chi-Wei Wang, and Chao-Hsin Wu, "Monolithically Integrated Optical NAND Gate Using Light-Emitting Transistors," in 2018 23rd Opto-Electronics and Communications Conference (OECC), 2018: IEEE, pp. 1-2.
  6. Yung-Ting Ho, Kai-Chieh Hsu, Li-Cheng Chang, and Chao-Hsin Wu, “Modified Small-Signal Model for the High Frequency GaN-on-Si HEMT with the Leaky Buffer” International Symposium on Growth of III-Nitrides (ISGN-7), Warsaw, Poland, August 2018, Paper#Th.7.4
  7. Hao-Tien Cheng, Hsuan-Han Chen, Chi-Wei Wang, and Chao-Hsin Wu, “Demonstration of an Optical OR Gate Using Light Emitting Transistors,” The 23rd Microoptics Conference (MOC2018), Taipei, Taiwan, October, 2018. F-5
  8. Chun-Yen Peng, Cheng-Han Wu, Shan-Fong Leong, and Chao-Hsin Wu, "Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 GB/s OOK," presented at the CS MANTECH, Austin, Texas, USA, 2018.
  9. P. Martyniuk, K. Michalczewski, T. Y. Tsai, C. H. Wu, and Y. R. Wu, "Theoretical modeling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling," in 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), 5-9 Nov. 2018 2018, pp. 7-8, doi: 10.1109/NUSOD.2018.8570269.
  10. Shun‐Cheng Yang and Chao‐Hsin Wu, "E‐Mode InGaAs Quantum Well Fin‐structured MOSHEMTs with (NH4)2S Passivation," Compound Semiconductor Week, ISCS/IPRM, May, 2018. Paper#We5PP‐RF.7
  11. Chi-Wei Wang, Yun-Hsuan Chang, Hsuan-Han Chen and Chao-Hsin Wu, “Optical NAND Logic Gates Using Light Emitting Transistor,” Compound Semiconductor Week, ISCS/IPRM, May, 2018. Paper#Fr3A9.3
  12. Kai‐Chieh Hsu, Li‐Cheng Chang, Yung‐Ting Ho and Chao‐Hsin Wu, “High Fmax AlGaN/GaN‐on Si HEMT with Thick Rectangular Gate,” Compound Semiconductor Week, ISCS/IPRM, May, 2018. Paper#We5PP‐RF.5
  13. Kai-Lin Fan, Yu-Syuan Cai, Hsun-Ming Chang, Ang-Kuan Chen, Ting-Syuan Lin, and Chao-Hsin Wu, “In-situ ALD Annealing in Germanium-doped Contact Black Phosphorus Field-Effect Transistors,” Compound Semiconductor Week, ISCS/IPRM, May, 2018. Paper#Fr15PP‐ND.5
  14. I‐Chen Tseng and Chao‐Hsin Wu, “High Speed GaN‐based micro‐LED Arrays for Visible Light Communication,” Compound Semiconductor Week, ISCS/IPRM, May, 2018. Paper#We5PP‐RF.6
  15. Kai-Lin Fan, Ting-Syuan Lin, Ang-Kuan Chen, Chao-Hsin Wu, “Black Phosphorus MOSFET with High-k Al2O3 Top Gate Dielectric,” 2018 IEEE Silicon Nanoelectronics Workshop (SNW 2018), June, 2018. P1-28
  16. Hsuan-Yun Kao, Cheng-Yi Huang, Chun-Yen Peng, Cheng-Ting Tsai, Huai-Yung Wang, Shan-Fong Leong, Hao-Chung Kuo, Chao-Hsin Wu, and Gong-Ru Lin, "Single-mode VCSEL for Nearly 100-Gbit/s QAM-OFDM transmission over 100-m OM4 multi-mode fiber," in Conference on Lasers and Electro-Optics/Pacific Rim, 2018: Optical Society of America, p. W3A. 12.
  17. Shun-Chieh Hsu, Yu-Ming Huang, Yu-Yun Cho, Chun-Yen Peng, Chao-Hsin Wu, Gong-Ru Lin, Hao-Chung Kuo, and Chien-Chung Lin, "Simulation model of multiple oxide-aperture VCSEL," in Conference on Lasers and Electro-Optics/Pacific Rim, 2018: Optical Society of America, p. W4A. 7.
2017
  1. Shun-Cheng Yang, Cheng-Jia Dai, Li-Cheng Chang, and Chao-Hsin Wu, "Modulate threshold voltage to achieve enhancement mode fin-structured InGaAs high electron mobility transistors (fin-HEMTs) through narrowing fin structure's width," in 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017: IEEE, pp. 1-2.
  2. Lucas Yang, Chi-Hsiang Chang, and Chao-Hsin Wu, "Analysis of quantum well optical modulation in light-emitting transistors," in Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications X, 2017, vol. 10103: International Society for Optics and Photonics, p. 1010322.
  3. I-Chen Tseng, Hao-Yu Lan, and Chao-Hsin Wu, "Characterization of blue InGaN/GaN quantum-well heterojunction bipolar light emitting transistors," in 2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017: IEEE, pp. 1-2.
  4. Chun-Yen Peng, Yan-Chien Lee, Cheng-Ting Tsai, Shan-Fong Leong, Hsuan-Yun Kao, Yu-Chieh Chi, Gong-Ru Lin, and Chao-Hsin Wu, "Investigation of Mirror-resistance reduction in the signal transmission integraty of VCSELs," in Conference on Lasers and Electro-Optics/Pacific Rim, 2017: Optical Society of America, p. s1676.
  5. Hsuan-Yun Kao, Cheng-Ting Tsai, Chun-Yen Pong, Shan-Fong Liang, Zu-Kai Weng, Yu-Chieh Chi, Hao-Chung Kuo, Jian Jang Huang, Tai-Cheng Lee, Tien-Tsorng Shih, Jau-Ji Jou, Wood-Hi Cheng, Chao-Hsin Wu, and Gona-Ru Lin, "Few-mode 850-nm VCSEL chip with direct 16-QAM OFDM encoding at 80-Gbit/s for 100-m OM4 MMF link," in 2017 Optical Fiber Communications Conference and Exhibition (OFC), 2017: IEEE, pp. 1-3.
  6. Yi-Hong Jiang, Li-Cheng Chang, Kai-Chieh Hsu, I-Chen Tseng, and Chao-Hsin Wu, "Performance Improvement using Diluted KOH Passivation on Recessed-gate AlGaN/GaN Metal-oxide-semiconductor High-electron-mobility Transistors Grown on 8-inch Silicon (111) Substrates," presented at the CS MANTECH Conference, Indian Wells, CA, USA, 2017.
  7. Hao-Yu Lan, Ying-Yung Lin, Chi-Hsiang Chang, and Chao-Hsin Wu, "406 MHz Modulation Bandwidth of GaN-Based Light-Emitting Diodes with Improved Transparent p-Contact Design," presented at the CS MANTECH, Indian Wells, CA, USA, 2017.
  8. Cheng-Han Wu, and Chao-Hsin Wu, “Negative Base Threshold Current of a Single Quantum-Well Transistor Laser,” Compound Semiconductor Week, ISCS/IPRM, Berlin, Germany, May, 2017.
  9. Cheng-Jia Dai, Li-Cheng Chang, and Chao-Hsin Wu, “Threshold Voltage Improvement Through Sidewall Control of InGaAs Fin-structured High Electron Mobility Transistors (Fin-HEMTs)” Compound Semiconductor Week, ISCS/IPRM, Berlin, Germany, May, 2017.
  10. Yun-Hsuan Chang, Yung-Lin Chou, Cheng-Han Wu, and Chao-Hsin Wu, “Analysis of Thermal Mechanisms of Current Gain in Quantum Well-Based Heterojunction Bipolar Transistor,” Compound Semiconductor Week 2017, Berlin, Germany, May., 2017
  11. Hsun-Ming Chang and Chao-Hsin Wu, "Investigation of annealing effect and environmental instability of Few-layer Black Phosphorus Transistors." In: Compound Semiconductor Week (CSW), Berlin, Germany, May., 2017
  12. Yan-Chien Lee, Chun-Yen Peng, and Shan-Fong Leong, Chao-Hsin Wu, “High-Speed 850nm VCSELs with 8% Indium-Alloyed Quantum Wells,” Compound Semiconductor Week (2017 CSW), poster, Berlin, Germany, May. 14-18, 2017.
  13. Li-Cheng Chang, Ming Yang, Yi-Hong Jiang, and Chao-Hsin Wu, "Investigation of GaN Fin-HEMTs with micron-scale fin width," in Gallium Nitride Materials and Devices XII, 2017, vol. 10104: International Society for Optics and Photonics, p. 101041F.
2016
  1. Hao-Yu Lan, Chi-Hsiang Chang, and Chao-Hsin Wu, “The electrical and optical characteristics of blue InGaN/GaN heterojunction bipolar light emitting transistors,” The 2nd International Conference on Electrical Engineering and Computer Science (2016 ICEECS), Taipei, Taiwan, Oct., 2016.
  2. Cheng-Han Wu, Yun-Hsuan Chang, and Chao-Hsin Wu, "Optical modulation of lateral-feeding-designed vertical cavity transistor lasers," in 2016 International Semiconductor Laser Conference (ISLC), 2016: IEEE, pp. 1-2.
  3. Cheng-Han Wu, Yun-Hsuan Chang, and Chao-Hsin Wu, “Current and Voltage Modulation of Lateral-Feeding- Designed Vertical Cavity Transistor Lasers,” The 2nd International Conference on Electrical Engineering and Computer Science (2016 ICEECS), Taipei, Taiwan, Oct., 2016.
  4. Tzung-Han Tsai, Min Yang, Li-Cheng Chang, and Chao-Hsin Wu, "Reduction of threshold voltage instability in recessed-gate AlGaN/GaN MOSHEMTs by KOH passivation," in 2016 Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1-2.
  5. Cheng-Ting Tsai, Chun-Yen Pong, Yun-Chen Wu, Shan-Fong Leong, Yu-Chieh Chi, Chao-Hsin Wu, Tien-Tsorng Shih, Jian Jang Huang, Hao-Chung Kuo, Wood-Hi Cheng, and Gong-Ru Lin, "Pre-leveled 16-QAM OFDM modulation of an 850-nm VCSEL for 56-Gbit/s transmission," in 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016: IEEE, pp. 1-3.
  6. Cheng-Ting Tsai, Shuo Chang, Chun-Yen Pong, Shan-Fong Liang, Yu-Chieh Chi, Chao-Hsin Wu, Tien-Tsorng Shih, Jian Jang Huang, Hao-Chung Kuo, Wood-Hi Cheng, and Gona-Ru Lin, "RIN suppressed multimode 850-nm VCSEL for 56-Gbps 16-QAM OFDM and 22-Gbps PAM-4 transmission," in 2016 Optical Fiber Communications Conference and Exhibition (OFC), 2016: IEEE, pp. 1-3.
  7. Chun-Yen Pong, Cheng-Ting Tsai, Yun-Chen Wu, Shan-Fong Leong, Yu-Chieh Chi, Gong-Ru Lin, and Chao-Hsin Wu, "Optimization of temperature-dependent 850 nm VCSELs with different oxide-confined aperture sizes," in 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016: IEEE, pp. 1-3.
  8. Shan-Fong Liang, Yuan-Fu Hsu, Gong-Sheng Cheng, and Chao-Hsin Wu, "Developing the OEIC solutions using two section light-emitting transistor," in Integrated Optics: Devices, Materials, and Technologies XX, 2016, vol. 9750: International Society for Optics and Photonics, p. 97500Q.
  9. Li-Cheng Chang, Tzung-Han Tsai, Yi-Hong Jiang, and Chao-Hsin Wu, "Enhancement-mode AlGaN/GaN MOS-HEMT on silicon with ultrathin barrier and diluted KOH passivation," in 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2016: IEEE, pp. 422-425.
  10. Li-Cheng Chang, Hao-Yu Lan, and Chao-Hsin Wu, "Characterization of in-plane gate transistors with different geometries," in 2016 Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1-2.
  11. Chia-Ming Chang, Li-Cheng Chang, and Chao-Hsin Wu, "Fabrication and characterization of InGaAs fin structure high electron mobility transistors," in 2016 Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1-2.
  12. Chi-Hsiang Chang, Shu-Wei Chang, and Chao-Hsin Wu, "The role of optoelectronic feedback on Franz-Keldysh voltage modulation of transistor lasers," in Physics and Simulation of Optoelectronic Devices XXIV, 2016, vol. 9742: International Society for Optics and Photonics, p. 974214.
2015
  1. Yu-Feng Yin, Yen-Hsiang Hsu, Liang-Yu Su, Yuan-Fu Hsu, Li-Cheng Chang, Chao-Hsin Wu, and JianJang Huang, "Optical Frequency Response of GaN-based Light-emitting Diodes with Embedded Photonic Crystals," presented at the CS MANTECH Conference, Scottsdale, Arizona, USA, 2015.
  2. Cheng-Han Wu, Yuan-Fu Hsu, Gong-Sheng Cheng, and Chao-Hsin Wu, "Characterization of heterojunction bipolar phototransistor with integrated two-section light-emitting transistors," in CS MANTECH Conf., Scottsdale, Arizona, USA, 18th, 2015, pp. 295-298.
  3. Shan-Fong Liang, Yuan-Fu Hsu, and Chao-Hsin Wu, "Cut-off frequency enhancement of light-emitting transistor under illumination," in Conference on Lasers and Electro-Optics/Pacific Rim, 2015: Optical Society of America, p. 28J2_5.
  4. Yung-Lin Chou, Yuan-Fu Hsu, and Chao-Hsin Wu, "Characterization of a two-section integrated tunnel-junction phototransistor," in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2015, vol. 3: IEEE, pp. 1-2.
2014
  1. Hao-Hsiang Yang, Hsiao-Lun Wang, and Chao-Hsin Wu, "Carrier transport analysis on the modulation speed of light-emitting transistors," in 2014 OptoElectronics and Communication Conference and Australian Conference on Optical Fibre Technology, 2014: IEEE, pp. 633-635.
  2. I-Te Lee, Hao-Hsiang Yang, Yu-Wen Chern, and Chao-Hsin Wu, "Optical bandwidth enhacnement at high-temperature operation of light emitting-transistors," in 2014 OptoElectronics and Communication Conference and Australian Conference on Optical Fibre Technology, 2014: IEEE, pp. 562-564.
  3. Yuan-Fu Hsu, Hao-Hsiang Yang, and Chao-Hsin Wu, "The influence of quantum-well depth on the optical modulation bandwidth of light emitting transistors," in 2014 OptoElectronics and Communication Conference and Australian Conference on Optical Fibre Technology, 2014: IEEE, pp. 501-503.
  4. Yu-Wen Chern, Hao-Hsiang Yang, I-Te Lee, and Chao-Hsin Wu, "The effect of charge-removing mechanism on the optical bandwidth enhancement in light-emitting transistors," in 2014 OptoElectronics and Communication Conference and Australian Conference on Optical Fibre Technology, 2014: IEEE, pp. 970-972.
Prior to 2013
  1. Wen-Chung Tu and Chao-Hsin Wu, "Current gain enhancement of light-emitting transistors under different ambient temperatures," presented at the CS MANTECH Conference, New Orleans, Louisiana, USA, 2013.
  2. Peng-Hao Chou, Hsiao-Lun Wang, and Chao-Hsin Wu, "The effect of aperture layout design on the multi-GHz operation of light-emitting transistors," in Nanophotonics and Micro/Nano Optics, 2012, vol. 8564: International Society for Optics and Photonics, p. 85640D.
  3. Chao-Hsin Wu, Gabriel Walter, Han Wui Then, and Milton Feng, "Design and layout of multi ghz operation of light emitting diodes," in CS Mantech Conference, 2010, vol. 1: Citeseer, pp. 247-250.
  4. Chao-Hsin Wu, Benjamin F Chu-Kung, and Milton Feng, "Process and performance improvements to InGaN/GaN HBTs," in Proc. Int. Conf. Compd. Semicond. Manuf. Technol. Dig. Papers, 2008, p. 7.5.
  5. Yi-Shin Su, Chao-Hsin Wu, and Ching-Fuh Lin, "Wavelength switching and light modulation in laser diodes with nonidentical multiple quantum wells," in Physics and Simulation of Optoelectronic Devices XIII, 2005, vol. 5722: International Society for Optics and Photonics, pp. 230-237.
  6. Yi-Shin Su, Wei-Che Chang, Chao-Hsin Wu, and Ching-Fuh Lin, "Gain measurement of broadband quantum dot SOA by two-section technique," in CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005., 2005: IEEE, p. 302.
  7. Chao-Hsin Wu, Yi-Shin Su, and Ching-Fuh Lin, "Measurement of broadband gain spectrum of semiconductor optical amplifiers using a two-section technique," in Conference on Lasers and Electro-Optics, 2004: Optical Society of America, p. CMJ5.
  8. Chao-Hsin Wu, Ching-Fuh Lin, Di-Ku Yu, and Bing-Ruey Wu, "Improved temperature characteristics of semiconductor lasers due to carrier redistribution among nonidentical multiple quantum wells," in Physics and Simulation of Optoelectronic Devices XI, 2003, vol. 4986: International Society for Optics and Photonics, pp. 237-244.